Abstract
Two-dimensional layered materials have attracted significant interest for their potential applications in electronic and optoelectronics devices. Among them, transition metal dichalcogenides (TMDs), especially molybdenum disulfide (MoS2), is extensively studied because of its unique properties. Monolayer MoS2 so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS2 with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled synthesis of high-quality monolayer MoS2 single crystals using low pressure CVD. Large-size monolayer MoS2 triangles with an edge length up to 405 μm were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized monolayer MoS2 triangles. The transmission electron microscopy results demonstrate that monolayer MoS2 triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS2 show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm2 V−1 s−1, indicating excellent electronic property comparing with previously reported CVD grown MoS2 monolayer. The MoS2 FETs also show a high photoresponsivity of 7 A W−1, as well as a fast photo-response time of 20 ms. The improved synthesis method recommended here, which makes material preparation much easier, may strongly promote further research and potential applications.
摘要
二维层状材料由于其在光电器件方面的潜在应用引起了广泛关注, 二硫化钼(MoS2)是其中研究最多的材料之一. 单层二硫化钼可通过机械剥离或者化学气相合成的方法制备, 但是与石墨烯相比, 大面积且高质量的单层二硫化钼单晶的可控合成仍然有待提高. 本文报道了一种可控合成大面积高质量单层MoS2单晶的方法, 合成出了边长达405 μm的单层二硫化钼三角形. 对产物进行了光谱表征, 结果表明其光学性质十分均匀, 透射电镜表征结果表明产物是单晶结构. 基于单层MoS2的场效应晶体管(FET)表现出良好的电学性能, 其载流子迁移率高达21.8 cm2 V−1 s−1,光响应度为7 A W−1, 响应时间仅为20 ms. 此合成方法使单层MoS2的制备更加简易可靠, 可促进其进一步研究及应用.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Fiori G, Bonaccorso F, Iannaccone G, et al. Electronics based on two-dimensional materials. Nat Nanotechnol, 2014, 9: 768–779
Bernardi M, Palummo M, Grossman JC. Extraordinary sunlight absorption and one nanometer thick photovoltaics using two-dimensional monolayer materials. Nano Lett, 2013, 13: 3664–3670
Eda G, Maier SA. Two-dimensional crystals: managing light for optoelectronics. ACS Nano, 2013, 7: 5660–5665
Radisavljevic B, Whitwick MB, Kis A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano, 2011, 5: 9934–9938
Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A. Single-layer MoS2 transistors. Nat Nanotechnol, 2011, 6: 147–150
Schmidt H, Wang S, Chu L, et al. Transport properties of monolayer MoS2 grown by chemical vapor deposition. Nano Lett, 2014, 14: 1909–1913
Lopez-Sanchez O, Lembke D, Kayci M, Radenovic A, Kis A. Ultrasensitive photodetectors based on monolayer MoS2. Nat Nanotechnol, 2013, 8: 497–501
Wu S, Huang C, Aivazian G, et al. Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization. ACS Nano, 2013, 7: 2768–2772
Zhang J, Najmaei S, Lin H, Lou J. MoS2 atomic layers with artificial active edge sites as transparent counter electrodes for improved performance of dye-sensitized solar cells. Nanoscale, 2014, 6: 5279–5283
Wu W, Wang L, Li Y, et al. Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics. Nature, 2014, 514: 470–474
Cho B, Hahm MG, Choi M, et al. Charge-transfer-based gas sensing using atomic-layer MoS2. Sci Rep, 2015, 5: 8052
Liu K, Yan Q, Chen M, et al. Elastic properties of chemical-vapordeposited monolayer MoS2, WS2, and their bilayer heterostructures. Nano Lett, 2014, 14: 5097–5103
Liu B, Chen L, Liu G, et al. High-performance chemical sensing using schottky-contacted chemical vapor deposition grown mono layer MoS2 transistors. ACS Nano, 2014, 8, 5304–5314
Late D, Liu B, Matte H, Dravid V, Rao C. Hysteresis in single-layer MoS2 field effect transistors. ACS Nano, 2012, 6: 5635–5641
Late D, Huang Y, Liu B, et al. Sensing behavior of atomically thin-layered MoS2 transistors. ACS Nano 2013, 7: 4879–4891
Zhan Y, Liu Z, Najmaei S, Ajayan P, Lou J. Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small, 2012, 8: 966–971
Van der Zande M, Huang Y, Chenet A, et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat Mater, 2013, 12: 554–561
Kim S, Sangwan K, Jariwala D, et al. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2. ACS Nano, 2014, 8: 10551–10558
Shi Y, Li H, Li J. Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques. Chem Soc Rev, 2015, 44: 2744–2756
Liu Z, Amani M, Najmaei S, et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat Commun, 2014, 5: 5246
Najmaei S, Liu Z, Zhou W, et al. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat Mater, 2013, 12: 754–759
Amani M, Chin L, Birdwell G, et al. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition. Appl Phys Lett, 2013, 102: 193107
Jeon J, Jang K, Jeon M, et al. Layer-controlled CVD growth of large-area two-dimensional MoS2 films. Nanoscale, 2015, 7: 1688–1695
Ling X, Lee H, Lin Y, et al. Role of the seeding promoter in MoS2 growth by chemical vapor deposition. Nano Lett, 2014: 14, 464–472
Zhang J, Yu H, Chen W, et al. Scalable growth of high-quality polycrystalline MoS2 monolayers on SiO2 with tunable grain sizes. ACS Nano, 2014, 8: 6024–6030
Wang S, Rong Y, Fan Y, et al. Shape evolution of monolayer MoS2 crystals grown by chemical vapor deposition. Chem Mat, 2014, 26: 6371–6379
Lee H, Zhang Q, Zhang W, et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv Mater, 2012, 24: 2320–2325
Ji Q, Zhang Y, Zhang Y, Liu Z. Chemical vapour deposition of group-VIB metal dichalcogenide monolayers: engineered substrates from amorphous to single crystalline. Chem Soc Rev, 2015, 44: 2587–2602
Balendhran S, Ou Z, Bhaskaran M, et al. Atomically thin layers of MoS2 via a two step thermal evaporation-exfoliation method. Nanoscale, 2012, 4: 461–466
Duan X, Wang C, Shaw C, et al. Lateral epitaxial growth of twodimensional layered semiconductor heterojunctions. Nat Nanotechnol, 2014, 9: 1024–1030
Najmaei S, Amani M, Chin L, et al. Electrical transport properties of polycrystalline monolayer molybdenum disulfide. ACS Nano, 2014, 8: 7930–7937
Liu L, Fathi M, Chen L, et al. Chemical vapor deposition growth of monolayer WSe2 with tunable device characteristics and growth mechanism study. ACS Nano, 2015, 9: 6119–6127
Zhou H, Wang C, Shaw C, et al. Large area growth and electrical properties of p-type WSe2 atomic layers. Nano Lett, 2015, 15: 709–713
Kumar K, Dhar S, Choudhury H, Shivashankar A, Raghavan S. A predictive approach to CVD of crystalline layers of TMDs: the case of MoS2. Nanoscale, 2015, 7: 7802–7810
Yin Y, Li H, Zhang H, et al. Single-layer MoS2 phototransistors. ACS Nano, 2012, 6: 74–80
Author information
Authors and Affiliations
Corresponding author
Additional information
These authors contributed equally to this work.
Xiaonian Yang is a master student since 2014 under the guidance of Prof. Caofeng Pan at Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, China. She received her BSc degree at the School of Materials Science and Engineering, Huazhong University of Science and Technology in 2014. Her current research concentrates on two-dimensional materials growth, corresponding device fabrication and their applications in nanoelectronics.
Qiang Li received his PhD degree in 2014 from Aarhus University, Denmark. Currently, he is a postdoctoral researcher at the Bio-SPM group, Aarhus University. His current research focuses on the development of novel atomic force microscope technique for probing the physical and chemical properties of new functional materials at the nanoscale.
Guofeng Hu received the BSc degree at the School of Science from Tianjin Polytechnic University, China, in 2010. He is currently pursuing his PhD degree at the Laboratory of Piezo-phototronics, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences. His research work is focused on the fields of piezotronics/piezo-phototronics for fabricating new electronic and optoelectronic devices.
Caofeng Pan received his BSc (2005) and PhD (2010) degrees in materials science and engineering from Tsinghua University, China. He then joined Prof. Zhong-Lin Wang’s group at Georgia Institute of Technology as a postdoctoral fellow. He is currently a professor and a group leader at Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science since 2013. His main research interests focus on the fields of piezotronics/piezo-phototronics for fabricating new electronic and optoelectronic devices, nano-power source (such as nanofuel cell, nano biofuel cell and nanogenerator), hybrid nanogenerators, and self-powdered nanosystems. He has published over 50 peer reviewed papers, with citation over 1000 and H-index of 19. Details can be found at http://piezotronics. binn.cas.cn/.
Electronic supplementary material
Rights and permissions
About this article
Cite this article
Yang, X., Li, Q., Hu, G. et al. Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application. Sci. China Mater. 59, 182–190 (2016). https://doi.org/10.1007/s40843-016-0130-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s40843-016-0130-1