Abstract
This work reports an efficient route for enhancing the performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFT). The mobility was greatly improved by about 38% by means of O2 plasma treatment. Temperature-stress was carried out to investigate the stability and extract the parameters related to activation energy (E a) and density-of-states (DOS). The DOS was calculated on the basis of the experimentally obtained E a, which can explain the experimental observation. A lower activation energy (E a, ~0.72 eV) and a smaller DOS were obtained in the O2 plasma treatment TFT based on the temperature-dependent transfer curves. The results showed that temperature stability and electrical properties enhancements in a-IGZO thin film transistors were attributed to the smaller DOS.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
K. Nomura, H. Ohta, A. Takagi, T. Kamiya, and H. Hosono, Nature 432, 488 (2004).
K. H. Ji, J. I. Kim, H. Y. Jung, S. Y. Park, Y. G. Mo, J. H. Jeong, J. Y. Kwon, M. K. Ryu, S. Y. Lee, R. Choi, and J. K. Jeong, J. Electrochem. Soc. 157, H983 (2010).
T. Oh, Electron. Mater. Lett. 11, 853 (2015).
P. Liu, T. P. Chen, Z. Liu, C. S. Tan, and K. C. Leong, Thin Solid Films 545, 533 (2013).
W.-S. Kim, Y.-K. Moon, S. Lee, B.-W. Kang, K.-T. Kim, J.-H. Lee, J.-H. Kim, B.-D. Ahn, and J.-W. Park, Jpn. J. Appl. Phys. 49, 08JF02 (2010).
R. L. Puurunen, J. Appl. Phys. 97, 121301 (2005).
L.-L. Zheng, Q. Ma, Y.-H. Wang, W.-J. Liu, S.-J. Ding, and D. W. Zhang, IEEE Electr. Dev. L. 37, 743 (2016).
H.-Y. Shih, F.-C. Chu, A. Das, C.-Y. Lee, M.-J. Chen, and R.-M. Lin, Nanoscale Res. Lett. 11, 1 (2016).
X. Ding, H. Zhang, J. Zhang, J. Li, W. Shi, X. Jiang, and Z. Zhang, Mat. Sci. Semicon. Proc. 29, 69 (2015).
G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
X. Ding, H. Zhang, H. Ding, J. Zhang, C. Huang, W. Shi, J. Li, X. Jiang, and Z. Zhang, Superlattice. Microst. 76, 156 (2014).
H. Faber, J. Hirschmann, M. Klaumünzer, B. Braunschweig, W. Peukert, and M. Halik, ACS Appl. Mater. Interfaces 4, 1693 (2012).
S. W. Ko, S. K. Kim, J. M. Kim, J. H. Cho, H. S. Park, and B. D. Choi, J. Nanosci. and Nanotechno. 15, 7476 (2015).
C. J. Chiu, Z. W. Pei, S. T. Chang, S. P. Chang, and S. J. Chang, Vacuum 86, 246 (2011).
K. Nayak, M. N. Hedhili, D. K. Cha, and H. N. Alshareef, Appl. Phys. Lett. 100, 202106 (2012).
H. C. Slade, M. S. Shur, S. C. Deane, and M. Hack, Appl. Phys. Lett. 69, 2560 (1996).
G.-W. Chang, T.-C. Chang, J.-C. Jhu, T.-M. Tsai, Y.-E. Syu, K.-C. Chang, Y.-H. Tai, F.-Y. Jian, and Y.-C. Hung, IEEE Electr. Dev. L. 33, 540 (2012).
J. Raja, K. Jang, N. Balaji, and J. Yi, Semicond. Sci. Technol. 28, 115010 (2013).
A. Indluru and T. L. Alford, IEEE T. Elec. Dev. 57, 3006 (2010).
K. Takechi, M. Nakata, T. Eguchi, H. Yamaguchi, and S. Kaneko, Jpn. J. Appl. Phys. 48, 011301 (2009).
B. D. Ahn, Y. S. Rim, H. J. Kim, J. H. Lim, K.-B. Chung, and J.-S. Park, J. Phys. D: Appl. Phys. 47, 105104 (2014).
J. K. Jeong, S. Yang, D.-H. Cho, S.-H. K. Park, C.-S. Hwang, and K. I. Cho, Appl. Phys. Lett. 95, 123505 (2009).
H. Wang, W. Xu, S. Zhou, F. Xie, Y. Xiao, L. Ye, J. Chen, and J. Xu, J. Appl. Phys. 117, 035703 (2015).
D. H. Kim, H. K. Jung, D. H. Kim, and S. Y. Lee, Appl. Phys. Lett. 99, 162101 (2011).
S. Y. Lee, D. H. Kim, E. Chong, Y. W. Jeon, and D. H. Kim, Appl. Phys. Lett. 98, 122105 (2011).
J. Zhang, X. Ding, J. Li, H. Zhang, X. Jiang, and Z. Zhang, Ceram. Int. 42, 8115 (2016).
Y. H. Tai, H. L. Chiu, and L. S. Chou, J. Electrochem. Soc. 159, J200 (2012).
G.-W. Chang, T.-C. Chang, J.-C. Jhu, T.-M. Tsai, Y.-E. Syu, K.-C. Chang, F.-Y. Jian, Y.-C. Hung, and Y.-H. Tai, Surf. Coat. Tech. 231, 281 (2013).
S. Jeong, Y. G. Ha, J. Moon, A. Facchetti, and T. J. Marks, Adv. Mater. 22, 1346 (2010).
S. Major, S. Kumar, M. Bhatnagar, and K. L. Chopra, Appl. Phys. Lett. 49, 394 (1986).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ding, X., Huang, F., Li, S. et al. Effect of O2 plasma treatment on density-of-states in a-IGZO thin film transistors. Electron. Mater. Lett. 13, 45–50 (2017). https://doi.org/10.1007/s13391-017-6214-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s13391-017-6214-6