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Solution-processed IGZO field-effect transistors with a three-step laser annealing process

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Abstract

In this paper, a three-step annealing process was employed to treat IGZO thin-film field-effect transistors (TFTs). We observed that TFTs prepared by an initial high-temperature thermal annealing exhibited a low threshold voltage. By employing a second-step low-temperature annealing, the threshold voltage of the TFT was positively shifted, demonstrating improved turn-off characteristics. However, after this process, a significant decrease in TFT mobility and a change in threshold voltage were observed. By introducing a third 633 nm laser annealing technique, we managed to control the threshold voltage and improve mobility. To investigate the mechanism of the changes in TFT performances up to different post-annealing processes, a series of characterization techniques were employed to explain the TFT performance changes.

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Funding

This work was supported by the National Natural Science Foundation of China (No. 52273242), the National Key R&D Program of China (Nos. 2021YFB2800703, 2021YFB2800701), and the Chinese Academy of Sciences.

Author information

Authors and Affiliations

  1. School of Microelectronics, Shanghai University, Shanghai, 201800, China

    Jiachen Bao & Yan Liu

  2. Laboratory of Thin Film Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China

    Jiachen Bao, Luying Huang, Yan Liu, Fenghua Liu & Weiping Wu

  3. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China

    Luying Huang

  4. State Key Laboratory of High Field Laser Physics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China

    Fenghua Liu & Weiping Wu

  5. Innovation and Integration Center of New Laser Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, 201800, China

    Hangxing Xie

Authors
  1. Jiachen Bao
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  2. Luying Huang
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  3. Yan Liu
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  4. Fenghua Liu
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  5. Hangxing Xie
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Contributions

Conceptualization: Fenghua Liu, Hangxing Xie, and Weiping Wu; Methodology: Jiacheng Bao, Yan Liu, and Fenghua Liu; Formal analysis and investigation: Jiacheng Bao, Luying Huang, Yan Liu, Fenghua Liu; Writing—original draft preparation: Jiacheng Bao; Writing—review and editing: Fenghua Liu, Hangxing Xie and Weiping Wu; Funding acquisition: Hangxing Xie and Weiping Wu; Resources: Hangxing Xie and Weiping Wu; and Supervision: Fenghua Liu, Hangxing Xie, and Weiping Wu.

Corresponding authors

Correspondence to Fenghua Liu, Hangxing Xie or Weiping Wu.

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Bao, J., Huang, L., Liu, Y. et al. Solution-processed IGZO field-effect transistors with a three-step laser annealing process. J Mater Sci: Mater Electron 35, 872 (2024). https://doi.org/10.1007/s10854-024-12633-1

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