Abstract
[(GaAs) m (Fe) n ] p composite films on GaAs(001) substrates obtained by molecular beam deposition methods at T s = 580°C have been thermally annealed, and magnetic/structural changes caused by the annealing have been measured to study the relation between room-temperature photo-magnetic effect and by-products in composite films. Annealing inhomogeneous [(GaAs)8(Fe)5]20 film, prepared by alternate beam deposition of Fe and GaAs, results in an increase in saturation magnetization, whereas the room-temperature photo-enhanced magnetization (RT-PEM) vanishes. Metamagnetic Fe3Ga4 is suppressed with the formation of ferromagnetic Fe3Ga2−x As x . Observed results suggest two important points: firstly, metamagnetic Fe3Ga4 compound is most likely meta-stable bi-product and may play a principle role for RT-PEM, and secondly, ferromagnetic Fe3GaAs and its derivatives are the stable form in Ga-As-Fe ternary system.
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Jamil, A.T.M.K., Noguchi, H. Effect of thermal annealing of high temperature growth [(GaAs) m (Fe) n ] p composite films on GaAs(001) by molecular beam epitaxy. Indian J Phys 85, 737–743 (2011). https://doi.org/10.1007/s12648-011-0069-8
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DOI: https://doi.org/10.1007/s12648-011-0069-8