Abstract
In this work, we study the electrical characteristics of polysilicon (resistivity, free carrier concentration and Hall mobility of carriers), depending on the annealing temperature of implantation for films of polycrystalline silicon having undergone a long heat treatment after implantation, and also the secondary annealing temperature (900-1100 ∘ C) of longer periods. The results have shown that the longer periods of secondary annealing have permitted the improvement of electrical characteristics of our films (decrease of the resistivity, increase of the free carriers concentration and the carriers Hall mobility).
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Zaidi, B., Hadjoudja, B., Chouial, B. et al. Effect of Secondary Annealing on the Electrical Properties of Polysilicon Thin Films. Silicon 7, 293–295 (2015). https://doi.org/10.1007/s12633-015-9282-y
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DOI: https://doi.org/10.1007/s12633-015-9282-y