Abstract
Ultrathin strained-Si/strained-Ge heterostructures on insulator have been fabricated using a bond and etch-back technique. The substrate consists of a trilayer of 9 nm strained-Si/4 nm strained-Ge/3 nm strained-Si on a 400-nm-thick buried oxide. The epitaxial trilayer structure was originally grown pseudomorphic to a relaxed Si0.5Ge0.5 layer on a donor substrate. Raman analysis of the as-grown and final transferred layer structures indicates that there is little change in the strain in the Si and Ge layers after layer transfer. These ultrathin Si and Ge films have very high levels of strain (∼1.8% biaxial tension and 1.4% compression, respectively), and are suitable for enhanced-mobility field-effect transistor applications.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
M.L. Lee and E.A. Fitzgerald, IEDM Tech. Dig., 429 (2003)
G. Xia, O.O. Olubuyide, M. Canonico, and J.L. Hoyt, Appl. Phys. Lett. 88, 13507 (2006)
I. Aberg, O.O. Olubuyide, J. Li, R. Hull, and J.L. Hoyt, IEEE Int. SOI Conf. Tech. Dig., 35 (2004)
E.A. Fitzgerald, Annu. Rev. Mater. Sci., 25, 417, 1995
P.M. Mooney, Mater. Sci. Eng. R17, 105, 1996
C.S. Tan, K.N. Chen, A. Fan, R. Reif, Elect. Chem. Soc. 8, G1, 2005
Z-Y. Cheng, M.T. Currie, C.W. Leitz, G. Taraschi, E.A. Fitzgerald, J.L. Hoyt, D.A. Antoniadis, Elect. Dev. Lett. 22 (7), 321, 2001
T.K. Carns, M.O. Tanner, K.L. Wang, J. Electrochem. Soc. 142, 1260, 1995
E. Anastassakis and M. Cardona, High Pressure in Semiconductor Physics II, ed. T. Suski and W. Paul (New␣York: Academic, 1998)
Acknowledgements
The authors would like to thank G. Riggott, C. Ní Chléirigh, and other colleagues at MTL/MIT. The authors also acknowledge the National Science Foundation for a graduate research fellowship and support from the FCRP MSD focus center.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Gomez, L., Canonico, M., Kim, M. et al. Fabrication of Strained-Si/Strained-Ge Heterostructures on Insulator. J. Electron. Mater. 37, 240–244 (2008). https://doi.org/10.1007/s11664-007-0337-8
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-007-0337-8