In this work, we present ball impact test (BIT) responses and fractographies obtained at an impact velocity of 500 mm/s on Sn-4Ag-0.5Cu, Sn-1Ag-0.5Cu, Sn-1Ag-0.5Cu-0.05Ni, Sn-1.2Ag-0.5Cu-0.05Ni, and Sn-1Ag-0.5Cu-0.05Ge package-level solder joints. The solder joints are bonded on substrate pads of either immersion tin (IT) or direct solder on pad (DSOP) surface finishes. Differences of BIT results with respect to multi-reflow are also reported. Taking the impact energy as an indication of board-level drop reliability of the solder joints, the BIT results indicate that better reliability can be achieved by adopting Sn-Ag-Cu solder alloys with low Ag weight contents as well as IT substrate pad finish rather than DSOP. Moreover, the addition of Ni or Ge to the solder alloy provides a large improvement; Ni alters the interfacial intermetallic compound (IMC) structure while Ge enhances the mechanical behavior of the bulk solder.
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The authors are grateful to Dr. Chang-Lin Yeh for technical comments and Shu-Hsien Lee and Chiu-Wen Lee for experimental support.
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Lai, YS., Song, JM., Chang, HC. et al. Ball Impact Responses of Ni- or Ge-Doped Sn-Ag-Cu Solder Joints. J. Electron. Mater. 37, 201–209 (2008). https://doi.org/10.1007/s11664-007-0319-x
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DOI: https://doi.org/10.1007/s11664-007-0319-x