Abstract
The surface science techniques of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and scanning tunneling microscopy (STM) have been used to characterize the clean Si(112) surface and the influence of an As monolayer on the properties and structure of the surface. In agreement with previous studies, the clean surface is found by both LEEd and atomically resolved STM images to be unstable with respect to faceting into other stable planes. Procedures for in-situ deposition of As onto clean Si surfaces were devised and XPS results show that approximately one monolayer of As can be deposited free of any contamination. The As/Si(112) surface is characterized by a sharper LEED pattern than for the clean surface and by STM images characterized by long rows along the \([\bar 110]\) direction with a regular width of 1.9 nm. This is consistent with a doubling of the periodicity in the \([11\bar 1]\) direction of the bulk-terminated unit cell. This implies that As yields a stable but reconstructed Si(112) surface.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
T.J. de Lyon, J.E. Jensen, M.D. Gorwitz, C.A. Cockrum, S.M. Johnson, and G.M. Venzor, J. Electron. Mater. 28, 705 (1999).
R. Sporken, S. Sivananthan, K.K. Mahavadi, G. Monfroy, and M. Bourerche, Appl. Phys. Lett. 55, 1879 (1989).
Y. Xin, N.D. Browning, S. Rujirawat, S. Sivananthan, Y.P. Chen, P.D. Nellist, and S.J. Pennycook, J. Appl. Phys. 84, 4292 (1998).
Y.P. Chen, J.P. Faurie, S. Sivananthan, G.C. Hua, and N. Otsuka, J. Electron. Mater. 24, 475 (2005).
Y.P. Chen, J.P. Faurie, and S. Sivananthan, J. Electron. Mater. 22, 951 (1993).
T.J. de Lyon, S.M. Johnson, C.A. Cockrum, O.K. Wu, W.J. Hamilton, and G.S. Kamath, J. Electrochem. Soc. 141, 2888 (2004).
M. Kawano, A. Ajisawa, N. Oda, M. Nagashima, and H. Wada, Appl. Phys. Lett. 69, 2876 (1996).
A. Million, N.K. Dhar, and J.H. Dinan, J. Cryst. Growth 159, 76 (1996).
S. Rujirawat, D.J. Smith, J.P. Faurie, G. Neu, V. Nathan, and S. Sivananthan, J. Electron. Mater. 27, 1047 (1998).
B. Yang, Y. Xin, S. Rujirawat, N.D. Browning, and S. Sivananthan, J. Appl. Phys. 88, 115 (2000).
T.J. de Lyon, D. Rajavel, S.M. Johnson, and C.A. Cockrum, Appl. Phys. Lett. 66, 2119 (2005).
S.L. Wright, M. Inada, and H. Kroemer, J. Vac. Sci. Technol. 21, 534 (1982).
N.K. Dhar, P.R. Boyd, M. Martinka, J.H. Dinan, L.A. Almeida, and N. Goldsman, J. Electron. Mater. 29, 748 (2000).
N.K. Dhar, C.E.C. Wood, A. Gray, H.Y. Wei, L. Salamanca-Riba, and J.H. Dinan, J. Vac. Sci. Technol. B 14, 2366 (1996).
J.D. Browski and H.-J. Müssig, Silicon Surfaces and Formation of Interfaces—Basic Science in the Industrial World (Hackensack, NJ: World Scientific, 2000).
R. Kaplan, Surf. Sci. 116, 104 (1982).
B.Z. Olshanetsky and V.I. Mashanov, Surf. Sci. 111, 414 (1981).
S.L. Wright, H. Kroemer, and M. Inada, J. Appl. Phys. 55, 2916 (1984).
Y. Yang and E.D. Williams, Surf. Sci. 215, 102 (1989).
Th. Berghaus, A. Brodde, H. Neddermeyer, and St. Tosch, Surf. Sci. 184, 273 (1987).
X.-S. Wang and W.H. Weinberg, Surf. Sci. 314, 71 (2004).
D.J. Chadi and J.R. Chelikowsky, Phys. Rev. B 24, 4892 (1981).
D.J. Chadi, Phys. Rev. B 29, 785–792 (1984).
C.H. Grein, J. Cryst. Growth, 180, 54 (1997).
S. Makefors, Surf. Sci. 443, 99 (1999).
A.A. Baski and L.J. Whitman, Phys. Rev. Lett. 74, 956 (2005)
A.A. Baski, S.C. Erwin, and L.J. Whitman, Surf. Sci. 393, 69 (1997).
V.G. Lifshits, A.A. Saranin, and A.V. Zotov, Surface Phases on Silicon (New York: Wiley, 2004), pp. 85–90.
M. Copel, R.M. Tromp, and U.K. Kohler, Phys. Rev. B 37, 10756 (1988).
C. Fulk, R. Sporken, B. Gupta, I. Batra, D. Zavitz, J. Dumont, M. Trenary, N. Dhar, J. Dinan, and S. Sivananthan, J. Electron. Mater. 34, 846 (2005).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Zavitz, D.H., Evstigneeva, A., Singh, R. et al. Influence of arsenic on the atomic structure of the Si(112) surface. J. Electron. Mater. 34, 839–845 (2005). https://doi.org/10.1007/s11664-005-0029-1
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-005-0029-1