Abstract
Interfacial morphologies during Cu wafer bonding at bonding temperatures of 300–400°C for 30 min followed by an optional 30-min or 60-min nitrogen anneal were investigated by means of transmission electron microscopy (TEM). Results showed that increased bonding temperature or increased annealing duration improved the bonding quality. Wafers bonded at 400°C for 30 min followed by nitrogen annealing at 400°C for 30 min, and wafers bonded at 350°C for 30 min followed by nitrogen annealing at 350°C for 60 min achieve the same excellent bonding quality.
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D. Sylvester and C. Hu, Proc. IEEE 89, 634 (2001).
P. Kapur, J.P. McVittie, and K.C. Saraswat, Proc. IEEE Interconnect Technology Conf. (Piscataway, NJ: IEEE, 2001), pp. 233–235.
International Technology Roadmap for Semiconductors 2001 (San Jose, CA: Semiconductor Industry Association, 2001).
V. Subramaniam, M. Toita, N.R. Ibrahim, S.J. Souri, and K.C. Saraswat, IEEE Electron Dev. Lett. 20, 341 (1999).
V.W.C. Chan, P.C.H. Chan, and M. Chan, IEEE Electron Dev. Lett. 22, 77 (2001).
A. Fan, A. Rahman, and R. Reif, Electrochem. Solid-State Lett. 2, 534 (1999).
J.-Q. Lu et al., Proc. IEEE Interconnect Technology Conf. (Piscataway, NJ: IEEE, 2002), pp. 78–80.
R. Reif, A. Fan, K.N. Chen, and S. Das, Proc. Int. Symp. on Quality Electronics Design (Los Alamitos, CA: IEEE Computer Society, 2001), pp. 33–37.
K.N. Chen, A. Fan, and R. Reif, J. Electron. Mater. 30, 331 (2001).
K.N. Chen, A. Fan, and R. Reif, J. Mater. Sci. 37, 3441 (2002).
K.N. Chen, A. Fan, C.S. Tan, and R. Reif, Appl. Phys. Lett. 81, 3774 (2002).
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Chen, K.N., Fan, A., Tan, C.S. et al. Temperature and duration effects on microstructure evolution during copper wafer bonding. J. Electron. Mater. 32, 1371–1374 (2003). https://doi.org/10.1007/s11664-003-0103-5
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DOI: https://doi.org/10.1007/s11664-003-0103-5