Abstract
A gold-indium isothermal solidification technique has been developed for die bonding. Both silicon on silicon and silicon on alloy 42 (chip size 2 × 2 mm2) are investigated. For silicon on silicon, the bonding is performed at 200°C within 30 sec. The bonds can withstand 1,500 cycles of temperature cycle between −65°C and 150°C without any degradation. For silicon on alloy 42, the bonding is done at 250°C within 5 sec. The bonds can pass the shear strength test specified by MIL STD 883D, Method 2019.5. The reliability of the bonds is evaluated by thermal cycle testing. After 500 cycles between −65°C and 150°C, only slight degradation was observed.
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Wang, T.B., Shen, Z.Z., Ye, R.Q. et al. Die bonding with Au/In isothermal solidification technique. J. Electron. Mater. 29, 443–447 (2000). https://doi.org/10.1007/s11664-000-0158-5
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DOI: https://doi.org/10.1007/s11664-000-0158-5