Abstract
We utilize a fully self-consistent 3D quantum mechanical simulator based on the Contact Block Reduction (CBR) method to investigate the effects of fin height and unintentional dopant on the device characteristics of a 10-nm FinFET device. The per-fin height off-current is found to be relatively insensitive to fin height while the corresponding per fin height on-current may significantly depend on fin height due to the stronger confinement with decreasing fin height. Also gate leakage is found to show similar behavior as device on-current with decreasing fin height. Tri-gate (TG) FinFET is found to show better performance compared to Double-gate (DG) FinFET, with the exception of gate leakage current. Simulation results show that an unintentional dopant within the channel can significantly alter device characteristics depending on its position and applied biases. In addition, the effects of unintentional dopant are found to be stronger at high drain bias than at low drain bias.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Mamaluy, D., et al.: Phys. Rev. B 71, 245321-1–245321-14 (2005)
Khan, H., Mamaluy, D., Vasileska, D.: IEEE Trans. Electron Devices 54, 784–796 (2007)
Khan, H., et al.: J. Comput. Electron. 3, 337–340 (2004)
Kranti, A., et al.: Semicond. Sci. Technol. 21, 409–421 (2006)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Khan, H., Mamaluy, D. & Vasileska, D. Fully 3D self-consistent quantum transport simulation of Double-gate and Tri-gate 10 nm FinFETs. J Comput Electron 7, 346–349 (2008). https://doi.org/10.1007/s10825-008-0224-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-008-0224-4