Abstract
The WKB approximation is used in this paper to develop a model simulating nanoscale MOSFETs with a reduced numerical cost. The method is based on the Schrödinger-Poisson approach with open boundary conditions (QTBM). Accurately results have been obtained with significantly gain in simulation time.
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Negulescu, C., Abdallah, N.B., Polizzi, E. et al. Simulation Schemes in 2D Nanoscale MOSFETs: A WKB Based Method. J Comput Electron 3, 397–400 (2004). https://doi.org/10.1007/s10825-004-7084-3
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DOI: https://doi.org/10.1007/s10825-004-7084-3