Abstract
A porous silicon (PS) surface micromachining technology for suspended RF-MEMS device fabrication is proposed. Using PS as sacrificial layer and SiO2 film as support membrane, suspended metallic structure has been realized. The lateral size of the obtained suspended inductor is 450 × 425 μm2. Sputtered aluminum with 1 μm thickness is used as structural materials. To avoid any damage of the Al structure during the process, TMAH solution with Si powder and (NH4)2S2O8 is used to remove the PS layer through etching holes.
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This work is supported by the National 985 Project and 973 Project (G1999033105) of China. And the SEM measurements were sponsored by the THSJZ in Tsinghua University.
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Ding, Y., Liu, Z., Liu, L. et al. A surface micromachining process for suspended RF-MEMS applications using porous silicon. Microsystem Technologies 9, 470–473 (2003). https://doi.org/10.1007/s00542-002-0266-7
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DOI: https://doi.org/10.1007/s00542-002-0266-7