Abstract
A new implantation-free lift-off process is presented. We deposit a layer with mismatched thermal expansion coefficient with respect to the substrate. Upon cooling, the differential contraction induces a large stress field which is released by the initiation and the propagation of a crack parallel to the surface. The principle is demonstrated on both single and multi-crystalline silicon. Films with an area of 25 cm2 and a thickness of 30–50 μm have been obtained. Some Si layers were further processed into solar cells. An energy conversion efficiency of 9.9% was reached on a 1 cm2 sample.
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References
M. Bruel, Electron. Lett. 31, 1201 (1995)
R. Brendel, Japan. J. Appl. Phys. 40, 4431 (2001)
C.S. Solanki, R.R. Bilyalov, H. Bender, J. Poortmans, Phys. Stat. Solidi A 182, 97 (2000)
K.J. Weber, A.W. Blakers, K.R. Catchpole, Appl. Phys. A 69, 195 (1999)
K. Sakaguchi, K. Yanagita, H. Kurisu, H. Suzuki, K. Ohmi, T. Yonehara, Electrochem. Soc. Proc. 99, 117 (1999)
L. Carnel, I. Gordon, D. Van Gestel, G. Beaucarne, J. Poortmans, A. Stesmans, J. Appl. Phys. 100, 063702 (2006)
J.W. Hutchinson, Z. Suo, Adv. Appl. Mechan. 29, 63 (1992)
A.G. Evans, M.D. Drory, M.S. Hu, J. Mater. Res. 3, 1043 (1988)
Z. Suo, J.W. Hutchinson, Int. J. Solids Struct. 25, 1337 (1989)
M.A. Green, J. Zhao, A. Wang, S.R. Wenham, IEEE Trans. Electr. Dev. 46, 1940 (1999)
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62.20.Mk; 68.55.Jk; 68.60.Bs; 84.60.Jt
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Dross, F., Robbelein, J., Vandevelde, B. et al. Stress-induced large-area lift-off of crystalline Si films. Appl. Phys. A 89, 149–152 (2007). https://doi.org/10.1007/s00339-007-4195-2
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DOI: https://doi.org/10.1007/s00339-007-4195-2