Abstract
In this paper, we employ different substrate temperatures during the deposition process and observe a highly ordered structure and strong orientation of copper phthalocyanine (CuPc) molecules on Si/SiO2 by using X-ray-diffraction and transmission electron microscopy analysis. The results show the effect of CuPc morphology at different substrate temperatures on the organic field-effect-transistor performance. When the substrate temperature for deposition of CuPc is 120 °C, a mobility of 3.75×10-3 cm2/V s can be obtained.
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73.61.Ph; 85.30.Tv; 78.66.Tr
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Xiao, K., Liu, Y., Yu, G. et al. Influence of the substrate temperature during deposition on film characteristics of copper phthalocyanine and field-effect transistor properties. Appl Phys A 77, 367–370 (2003). https://doi.org/10.1007/s00339-003-2169-6
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DOI: https://doi.org/10.1007/s00339-003-2169-6