Abstract
Foundations of sputtering profile evaluation are discussed, which allow the conversion of a measured sputtering profile, I = f(t), to a true element concentration profile celem. = f(z), or in special cases to a phase profile cphase = f(z). As a relatively new method for quantitative thin film analysis, glow discharge optical emission spectrometry (GDOES) has the special advantage of a narrow depth resolution function. Growing sputter crater profiles can be eliminated by a deconvolution algorithm, as is shown for TiN/TiAlN multilayers. The sputtering rate as a function of depth may be also deduced by a special wedge crater profile, which is sputtered into the material by an ion beam under suitable beam control. Further information on a phase depth profiling may be obtained by principal component analysis, as is discussed for AES and XPS investigations of P implanted Ti. A special technique of cross section imaging of thin layers is the analytical TEM, which allows the parallel investigation of microstructure and element distribution, as illustrated for a Cr-Fe multilayer.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
Author information
Authors and Affiliations
Additional information
Received: 24 June 1996 / Revised: 10 January 1997 / Accepted: 14 January 1997
Rights and permissions
About this article
Cite this article
Wetzig, K., Baunack, S., Hoffmann, V. et al. Quantitative depth profiling of thin layers. Fresenius J Anal Chem 358, 25–31 (1997). https://doi.org/10.1007/s002160050338
Issue Date:
DOI: https://doi.org/10.1007/s002160050338