A hydrodynamical model based on the maximum entropy principle is formulated for GaAs semiconductors. Explicit closure relations for the moment equations of the electron density, energy, velocity and energy-flux are obtained by using the Kane dispersion approximation for the description of the conduction bands. All the relevant scattering mechanisms are included: interaction of electrons with acoustic, polar and non-polar optical phonons, impurities. Application to the bulk case reveal s that the model describes with accuracy the effect of negative differential conductivity, typical of GaAs, as well as the velocity overshoot and saturation.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
Author information
Authors and Affiliations
Additional information
Received July 1, 2001 / Published online September 4, 2002
RID="a"
ID="a" e-mail mascali@dmi.unict.it
RID="b"
ID="b" e-mail romano@dmi.unict.it, web www.dmi.unict.it /~ romano
Communicated by Ingo Müller, Berlin
Rights and permissions
About this article
Cite this article
Mascali, G., Romano, V. Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle. Continuum Mech Thermodyn 14, 405–423 (2002). https://doi.org/10.1007/s001610200082
Issue Date:
DOI: https://doi.org/10.1007/s001610200082