Abstract
Defect equilibria for binary semiconducting compound phases which exhibit ionized native donor and acceptor defects were considered, and equations describing the pressure-temperature-composition relationships for these compound phases were derived. These equations were used to analyze experimental data from the literature for tin telluride. Excellent agreement was obtained between calculated thermodynamic and phase boundary values and experimental data. The approach presented is readily extended to obtain equations for the thermodynamic properties of ternary and higher order semiconducting compound phases.
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Lin, JC., Ngai, T.L. & Chang, Y.A. Thermodynamic properties and defect structure of semiconducting compound phases: Tin telluride. Metall Trans A 17, 1241–1245 (1986). https://doi.org/10.1007/BF02665324
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DOI: https://doi.org/10.1007/BF02665324