Abstract
The interdiffused multilayer process (IMP) is a novel approach to growing Hg1−xCdxTe. In this process, alternating thin films of HgTe and CdTe are grown and allowed to interdiffuse resulting in a bulk material of constant composition. A model of the IMP must include the effects of both the deposition of new material and the interdiffusion of the material. It must also be able handle the flush phases of the IMP where the growth rate decays to zero. Existing approaches to modeling epitaxial growth of Hg1−xCdxTe treat growth and interdiffusion as separate, sequential steps resulting in numerical stability problems, pseudodiffusion effects, or flush phase modeling problems. The model presented here, however, is based on an incremental balance where growth and diffusion occur simultaneously, resulting in a model exhibiting none of the difficulties mentioned above. The IMP growth model is integrated with a model for calculating reflectance from a laser directed at near normal incidence angle. The predicted reflectance is compared to experimental measurements and showed a good preliminary fit when the model employed default parameters. The agreement is greatly improved after parameter fitting.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
J. Turnicliffe, S.J.C. Irvine, O.D. Dosser and J.B. Mullin,J. Cryst. Growth 13, 245 (1984).
J.B. Mullin, J. Geiss, S.J.C. Irvine, J.S.Gough and A. Royale,Mater. Res. Soc. Symp. Proc. 90, 367 (Pittsburgh, PA: Mater. Res. Soc., 1987).
J. Bajaj, S.J.C. Irvine, H.O. Sankur and S.A. Svoronos,J. Electron. Mater. 22, 899 (1993).
S.J.C. Irvine, J. Bajaj and H.O. Sankur,J. Cryst. Growth 21, 654 (1992).
S.J.C. Irvine, E.R. Gertner, L.O. Bubulac, R.V. Gil and D.D. Edwall,Semicond. Sci. Technol. 6, C15 (1991).
M.-F.S. Tang and D.A. Stevenson,J. Vac. Sci. Technol. A 6, 2650 (1988).
M.-F.S. Tang and D.A. Stevenson,J. Vac. Sci. Technol. A 7, 2650 (1989).
C.G. Morgan-Pond,J. Electron. Mater. 20, 399 (1991).
Y. Jianrong, Y. Zhenzhong, L. Jiming and T. Dingyuan,J. Cryst. Growth 114, 351 (1991).
Y. Kim, A. Ourmazd and R.D. Feldman,J. Vac. Sci. Technol. A 8, 1116 (1990).
M.-F.S. Tang and D.A. Stevenson,J. Vac. Sci. Technol. A 5, 3124 (1987).
M.-F.S. Tang and D.A. Stevenson,Appl. Phys. Lett. 50, 1272 (1987).
K. Zanio and T. Massopust,J. Electron. Mater. 15, 103(1986).
K. Zanio,J. Vac. Sci. Technol. A 4, 2106 (1986).
B.W. Ludington,Mater. Res. Soc. Symp. Proc. 90, 437 (Pittsburgh, PA: Mater. Res. Soc., 1987).
C.J. Rossouw, G.N. Pain, S.R. Glanville and D.C. MacDonald,J. Cryst. Growth 106, 673 (1990).
D.K. Arch, J.P. Faurie, J.-L. Staudenmann, M. Hibbs-Brenner and P. Chow,J. Vac. Sci. Technol. A 4, 2101 (1986).
K. Zanio and K. Hay,Mater. Res. Soc. Symp. Proc. 90, 39 (Pittsburgh, PA: Mater. Res. Soc., 1987).
J.G. Heming and D.A. Stevenson,J. Cryst. Growth 82, 621 (1987).
N. Archer and H. Palfrey,J. Electron. Mater. 20, 419 (1991).
W.H. Press, B.P. Flannery, S.A. Teukolsky and W.T. Vetterling,The Art of Scientific Computing, (Cambridge: Cambridge University Press, 1988).
W. Southwell, personal communication.
H.A. Macleod,Thin-Film Optical Filters, 2nd Ed., (New York: Macmillan Publishing Company, 1986).
D. Rhiger,J. Electron. Mater. 22, 887 (1993).
T.R. Cuthbert,Optimization Using Personal Computers with Applications to Electrical Networks, (New York: John Wiley & Sons, Inc., 1987).
A.J. Avery, D.J. Diskett, D.W. Lane, J. Giess and S.J.C. Irvine,Nucl. Instr. Meth. Phys. Res. B45, 181 (1990).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Svoronos, S.A., Woo, W.W., Irvine, S.J.C. et al. A model of the interdiffused multilayer process. J. Electron. Mater. 25, 1561–1569 (1996). https://doi.org/10.1007/BF02655400
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02655400