Abstract
The need for ever increasing switching speeds and frequency limits of integrated circuits has resulted in growing interests in the use of III–V-semiconductor devices, especially field-effect transistors.
In this paper first the present status of commercially available GaAs-MESFETs (homostructure FET) is described. Then means of improving these devices by shrinking the dimensions and increasing the dopant concentrations are discussed. The possibilities of further improvements by using (AlGa)As/GaAs-heterostructures having a two-dimensional electron gas as channel are explained. Especially the influence of the better transport properties of heterostructures (as compared to homostructures) is discussed. Finally the consequences of higher device speed on integrated circuit performance are demonstrated using a simple circuit example.
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© 1984 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH
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Dämbkes, H., Heime, K. (1984). High-speed homo- and heterostructure field-effect transistors. In: Grosse, P. (eds) Advances in Solid State Physics. Advances in Solid State Physics, vol 24. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107455
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DOI: https://doi.org/10.1007/BFb0107455
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