Abstract
In selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas (2 DEG) at the heterointerface a second conductive channel exists, if the AlxGa1−xAs layer is not totally depleted from free carries. The occurrence of parallel conductance has a deleterious effect on the performance of high-electron mobility transistors (HEMTs) fabricated from this material. Although in principle computable, parallel conductance depends on a large number of design parameters to be chosen for the heterostructure, which are additionally affected by the presence of deep electron traps inn-AlxGa1−xAs of composition 0.25<x<0.35. Capacitance-voltage, Hall effect, and transverse magnetoresistance measurements in the temperature range 4–300 K were used to detect the undesired parallel conductance and to demonstrate its effect on the result of these evaluation techniques. In addition, the significant influence of parallel conductance on the dc properties of HEMTs fabricated from selectively dopedn-AlxGa1−xAs/GaAs heterostructures is shown.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
R. Dingle, H.L. Störmer, A.C. Gossard, W. Wiegmann: Appl. Phys. Lett.33, 665 (1978)
H.L. Störmer, A. Pinczuk, A.C. Gossard, W. Wiegmann: Appl. Phys. Lett.38, 691 (1981)
K. von Klitzing, H. Obloh, G. Ebert, J. Knecht, K. Ploog: InPrecision Measurement and Fundamental Constants II, ed. by B.N. Taylor and W.D. Phillips [Natl. Bureau of Standards (US), Spec. Publ. 617] (1981)
D.C. Tsui, H.L. Störmer, A.C. Gossard: Phys. Rev. B25, 1405 (1982)
D.C. Tsui, H.L. Störmer, A.C. Gossard: Phys. Rev. Lett.48, 1559 (1982)
G. Ebert, K. von Klitzing, C. Probst, K. Ploog: Solid State Commun.44, 95 (1982)
S. Hiyamizu, T. Mimura: J. Cryst. Growth56, 455 (1982)
D. Delagebeaudeuf, N.T. Linh: IEEE Trans. ED-29, 955 (1982)
K. Joshin, T. Mimura, M. Niori, Y. Yamashita, K. Kosemura, J. Saito: Microwave Theory and Technique Symposium, 1983, Technical Digest
H. Dämbkes, K. Heime, K. Ploog, G. Weimann: 8th European Specialist Workshop on Active Microwave Semiconductor Devices, Maidenhead, England, 1983
H. Künzel, H. Jung, E. Schubert, K. Ploog: J. Phys. (Paris)43, Colloque C5, C5–175 (1982)
H. Jung, A. Fischer, K. Ploog: Appl. Phys. A33, 97 (1984)
K. Hikosaka, T. Mimura, S. Hiyamizu: Inst. Phys. Conf. Ser.63, 233 (1982)
H. Künzel, K. Ploog, K. Wünstel, B.L. Zhou: J. Electron. Mater.13 (1984) to be published
R. Dingle, R.A. Logan, J.R. Arthur: Inst. Phys. Conf. Ser.33a (1976) 210
G. Abstreiter, E. Bauser, A. Fischer, K. Ploog: Appl. Phys.16, 345 (1978)
H. Künzel, K. Graf, M. Hafendörfer, K. Ploog: To be published
S.P. Svensson, J. Kanaki, T.G. Andersson, P.O. Nilsson: Surf. Sci.124, L31 (1983) and references therein
C. Barrett, F. Chekir, T. Neffati, A. Vappaille, J. Massies, N.T. Linh: Physica117 B and118 B, 851 (1982) and references therein
R. Dingle: InAdvances in Solid State Physics, ed. by H.J. Queisser (Vieweg, Braunschweig 1975) Vol. XV, p. 21
R.A. Smith:Semiconductors (Cambridge University Press, Cambridge 1978) p. 83
W.B. Joyce, R.W. Dixon: Appl. Phys. Lett.31, 354 (1977)
H. Kroemer: J. Appl. Phys.52, 873 (1981)
T. Ando, A.B. Fowler, F. Stern: Rev. Mod. Phys.54, 437 (1982)
L. Loreck, H. Dämbkes, K. Heime, K. Ploog, G. Weimann: Proc. 7th Intern. Conf. on Noise in Physical Systems, 3rd Intern. Conf. on 1/f Noise, Montpellier, France, Mai 1983 (to be published)
D.V. Lang, R.A. Logan, M. Jaros: Phys. Rev. B19, 1015 (1979)
D.P. Kennedy, P.C. Murley, W. Kleinfelder: IBM J. Res. Dev.12, 399 (1968)
K. Ploog, H. Künzel, A. Fischer: J. Electrochem. Soc.128, 400 (1981)
W.C. Johnson, P.T. Panousis: IEEE Trans. ED-18, 965 (1971)
H. Künzel, A. Fischer, J. Knecht, K. Ploog: Appl. Phys. A32, 69 (1983)
T. Ando: J. Phys. Soc.51, 3893 (1982)
S. Hiyamizu, T. Fujii, T. Mimura, K. Nanbu, J. Saito, H. Hashimoto: Jpn. J. Appl. Phys.20, L455 (1981)
T.J. Drummond, W. Kopp, R. Fischer, H. Morkoc, R.E. Thorne, A.Y. Cho: J. Appl. Phys.53, 1238 (1982)
R. Petritz: Phys. Rev.110, 1254 (1958)
R.D. Larabee, W.R. Thurber: IEEE Trans. ED-27, 32 (1980)
H.H. Berger: Solid-State Electron.15, 145 (1972)
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Schubert, E.F., Ploog, K., Dämbkes, H. et al. Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors. Appl. Phys. A 33, 63–76 (1984). https://doi.org/10.1007/BF00617610
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/BF00617610