Abstract
Surface potential of lightly doped symmetric double-gate MOSFET is analytically evaluated using Ortiz-Conde model for different structural dimensions in nanometric range, and corresponding drain current is evaluated for lower region of applied bias. The device dimension is considered in nanometer range, and due to light doping, the result of potential distribution exhibits increasing nature with gate voltage, where potential drop across dielectric layer is taken into account for realistic calculation. Pinch-off voltage dependence on material and structural parameters is estimated from static characteristics, and corresponding drain resistance is calculated. Simulated findings are very close to the previously obtained results. Result will help to design DG for low power application.
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Roy, K., Chowdhury, A.R., Deyasi, A., Sarkar, A. (2019). Computing Surface Potential and Drain Current in Nanometric Double-Gate MOSFET Using Ortiz-Conde Model. In: Mandal, J., Sinha, D., Bandopadhyay, J. (eds) Contemporary Advances in Innovative and Applicable Information Technology. Advances in Intelligent Systems and Computing, vol 812. Springer, Singapore. https://doi.org/10.1007/978-981-13-1540-4_5
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DOI: https://doi.org/10.1007/978-981-13-1540-4_5
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