Abstract
Most nitrides have a relative permittivity (ε r) of ~10 at low frequencies and low temperature, but resistivities which vary from 10 to 1012 Ωcm at ambient conditions. The stability of many nitride ceramics at elevated temperature makes them attractive as dielectrics in harsh environments. The main trends in the published dielectric data are outlined, and discussed in detail for Si3N4-based ceramics. New data are presented for the electrical resistivity, relative permittivity, loss factor and breakdown strength of AlN and Si3N4 ceramics, and Si3N4-A1N ceramic composites. The effect of microstructural features on dielectric properties are discussed.
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Freer, R., Owate, I.O. (1990). The Dielectric Properties of Nitrides. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_36
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DOI: https://doi.org/10.1007/978-94-009-2101-6_36
Publisher Name: Springer, Dordrecht
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