Abstract
The temperature dependencies of the permittivity and dielectric loss of reaction bonded silicon nitride (RBSN) have been measured between 20 and 900° C at frequencies covering the range from 3 Hz to 300 kHz. Above about 300° C both parameters have a large effect. Analysis of the permittivity data in terms of the theory discussed by Jonscher and by Dissado and Hill predicts loss peaks at 48 Hz and 8 Hz at temperatures of 900 and 800° C, respectively. These values are in close agreement with those found independently from direct observation of the temperature and frequency variations of dielectric loss. On the assumption that a thermal activation process is responsible for the temperature dependence of the loss peak frequency, the associate activation energy is found to be about 1.94 eV.
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Thorp, J.S., Bushell, T.G., Evans, D. et al. The temperature and frequency dependencies of permittivity and dielectric loss in reaction bonded silicon nitride. J Mater Sci 22, 2641–2644 (1987). https://doi.org/10.1007/BF01082157
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DOI: https://doi.org/10.1007/BF01082157