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Structure and Properties of Si-Doped Boron Carbide

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The Physics and Chemistry of Carbides, Nitrides and Borides

Part of the book series: NATO ASI Series ((NSSE,volume 185))

Abstract

The extension of the homogeneity field of B12(B,C,Si)3 was established by sintering experiments in the B - rich corner of the B-C-Si system in the temperature range of 1000–2100°C. Below the ternary eutectic temperature of 1385°C the formation of B12(B,C,Si)3 is generated by a diffusion-controlled mono-molecular phase boundary reaction. Above this temperature, a ternary liquid phase exists which promotes dissolution-reprecipitation reactions. The maximum solid solubility of Si in the boron carbide lattice is 2.5 ± 0.3 at. -% at 2050° C. The increase of the aspect ratio co/ao of the unit cell with the Si-content indicates that Si occupies preferentially C-sites in the linear C-B-C chain and thereafter interstitial or icosahedral sites in prolongation of the chain.

As a result of the Si→C substitution, SiC-layers are precipitated around B12(B,C,Si)3 particles during liquid phase hot pressing which prevents an exaggerated grain growth and thus enhances strength and toughness. Pressureless sintering results in a high porosity because of unsuitable wetting conditions and evaporation-recordensation reactions.

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Authors and Affiliations

  1. Institute for Materials Science Powdermetallurgical Laboratory, Max-Planck-Institute for Metals Science, Heisenbergstrasse 5, D-7000, Stuttgart 80, F.R. Germany

    R. Telle

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  1. R. Telle
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Editors and Affiliations

  1. Materials Science Centre, University of Manchester/UMIST, Grosvenor Street, Manchester, MI 7HS, UK

    Robert Freer

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© 1990 Kluwer Academic Publishers

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Telle, R. (1990). Structure and Properties of Si-Doped Boron Carbide. In: Freer, R. (eds) The Physics and Chemistry of Carbides, Nitrides and Borides. NATO ASI Series, vol 185. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2101-6_16

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  • DOI: https://doi.org/10.1007/978-94-009-2101-6_16

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7444-5

  • Online ISBN: 978-94-009-2101-6

  • eBook Packages: Springer Book Archive

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