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Cited References
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49Pea: G. L. Pearson and J. Bardeen, “Electrical Properties of Pure Silicon and Silicon Alloys Containing Boron and Phosphorus”,Phys. Rev., 75, 865–883 (1949). (Crys Structure, Equi Diagram; Experimental)
51Bre: L. Brewer, D. L. Sawyer, D. H. Templeton and C. H. Dauben, “A Study of the Refractory Borides”,J. Am. Ceram. Soc., 34, 173–179 (1951). (Equi Diagram; Experimental)
53Hal: R. N. Hall, “Segregation of Impurities During the Growth of Germanium and Silicon Crystals”,J. Phys. Chem., 57, 836–839 (1953). (Equi Diagram; Experimental)
54Bur: J. A. Burton, “Impurity Centers in Ge and Si”,Phys., 20, 845–854 (1954). (Equi Diagram; Theory)
54Ful: C. S. Fuller and J. A. Ditzenberger, “Diffusion of Boron and Phosphorus into Silicon”,J. Appl. Phys., 25, 1439–1440 (1954). (Equi Diagram; Experimental)
55Hor: F. H. Horn, “Densitometric and Electrical Investigation of Boron in Silicon”,Phys. Rev., 97, 1521–1525 (1955). (Equi Diagram, Crys Structure; Experimental)
55Sam: G. V. Samsonov and V. P. Latysheva, “K Voprosu o Khimicheskikh Soyedinenyakh Bora s Kremnyem (On the Question of Chemical Compounds of Boron with Silicon)”,Dokl. Akad. Nauk SSSR, 105, 499 (1955). (Crys Structure; Experimental)
56Sta: J. A. Stavrolakis, H. N. Barr, and H. H. Rice, “An Investigation of Boride Cermets”,Am. Ceram. Soc. Bull., 35, 47–52 (1956). (Equi Diagram; Experimental)
56Zhu: N. N. Zhuravlev, “Rentgenograficheskoye Opredelenye Struktury SiB6 (X-Ray Determination of the SiB6 Structure)”,Kristallografiya, 1, 666–668 (1956). (Crys Structure; Experimental)
57Gur: M. A. Gurevich, V. A. Epelbaum, and B. F. Ormont, “Ob Obrazovanii Fazy SiB3 v Sisteme Kremnij-bor (On the Formation of SiB3 Phase in the Silicon-Boron System)”,Zh. Neorg. Khim., 2, 206–208 (1957). in Russian; TR:Russ. J. Inorg. Chem., 2(1) 315–318 (1957). (Crys Structure; Review)
57Now: H. Nowotny, E. Dimakopoulou, and H. Kudielka, “Untersuchungen in den Dreistoffsystemen Molybdän-Silizium-Bor, Wolfram-Silizium-Bor und in dem System: VSi2−TaSi2 (Investigation of the Ternary Systems Molybdenum-Silicon-Boron, Tungsten-Silicon-Boron, and of the System VSi2−TaSi2)”,Monatsch. Chem., 88, 180–192 (1957) in German. (Equi Diagram; Experimental)
58Ada: R. F. Adamsky, “Unit Cell and Space Group of Orthorhombic SiB6”,Acta Crystallogr., 11, 744–745 (1958). (Crys Structure; Experimental)
59Cli: C. F. Cline, “An Investigation of the Compound Silicon Boride SiB6”,J. Electrochem. Soc., 106, 322–325 (1959). (Crys Structure; Experimental)
59Dec: B. F. Decker and J. S. Kasper, “The Crystal Structure of a Simple Rhombohedral Form of Boron”,Acta Crystallogr., 12, 503–506 (1959). (Crys Structure; Experimental)
59Epe: V. A. Epelbaum, M. A. Gurevich and M. S. Starostina, “The Solubility of Boron in Silicon”,Zh. Neorg. Khim., 4, 1881–1884 (1959) in Russian; TR:Russ. J. Inorg. Chem., 4 851–853 (1959). (Equi Diagram, Crys Structure; Experimental)
59Kna: W. A. Knarr, “A Study of the Silicon-Boron Phases and a Determination of the Enthalpy of Vaporization and Formation of Silicon Hexaboride”, Ph. D. thesis, University of Kansas (1959). (Equi Diagram, Thermo; Experimental; Indicates presence of a phase diagram.)
59Sle: V. M. Sleptsov and G. V. Samsonov, “Do Pitannia pro Rozchinnist Boru v Kremnij (On the Solubility of Boron in silicon)”,Dop. Akad. Nauk Ukr. RSR, 982–984 (1959) in Russian. (Crys Structure, Equi Diagram; Experimental)
60Bro: C. Brosset and B. Magnusson, “The Silicon-Boron System”,Nature, 187, 54–55 (1960). (Equi Diagram, Crys Structure; Experimental)
60Cli: C. F. Cline and D. E. Sands, “A New Silicon Boride, SiB4”,Nature, 185, 456 (1960). (Crys Structure; Experimental)
60Col: E. Colton, “Preparation of Tetraboron Silicide, B4Si”,J. Am. Chem. Soc., 82, 1002 (1960). (Equi Diagram; Experimental)
60Mat: V. I. Matkovich, “A New Form of Boron Silicide, B4Si”,Acta Crystallogr., 13, 679–680 (1960). (Crys Structure; Experimental)
60Riz: H. F. Rizzo and L. R. Bidwell, “Formation and Structure of SiB4”,J. Am. Ceram. Soc., 43, 550–552 (1960). (Crys Structure; Experimental)
60Tal: C. P. Talley, “A New Polymorph of Boron”,Acta Crystallogr., 13, 271–272 (1960). (Crys Structure; Experimental)
60Tru: F. A. Trumbore, “Solid Solubilities of Impurity Elements in Germanium and Silicon”,Bell Syst. Tech. J., 39, 205–233 (1960). (Equi Diagram, Thermo; Theory)
62Mag: B. Magnusson and C. Brosset, “The Crystal Structure of B2.89Si”,Acta. Chem. Scand., 16, 449–455 (1962). (Crys Structure; Experimental)
62Sam: G. V. Samsonov and V. M. Sleptsov, “Poperednij Variant Diagrami Sistemi Bor-Kremnij (Preliminary Variation of the Diagram of the Boron-Silicon System)”,Dop. Akad. Nauk Ukr. RSR, 1066–1068 (1962). (Equi Diagram; Experimental; Indicates presence of a phase diagram)
63Bec: H. J. Becher, “Uber die Bildung der Tetragonalen Bormodifikation durch Substitution der Berylliumatome im Gitter des BeB12 (On the Formation of Tetragonal Modification of Boron Through Substitution of Beryllium Atoms in the Lattice of BeB12”,Z. Anorg. Chem., 321, 217–223 (1963) in German. (Crys Structure; Experimental)
Indicates key paper63Sam: G. V. Samsonov and V. M. Sleptsov, “Investigation of the Solubility of Boron in Silicon”,Zh. Neorg. Khim, 8, 2009–2011 (1963) in Russian; TR:Russ. J. Inorg. Chem., 8, 1047–1048 (1963). (Crys Structure, Equi Diagram; Experimental)
65Gie: R. F. Giese, Jr., J. Economy, and V. I. Matkovich, “Interstitial Derivatives of β Boron”,Z. Krist., 122, 144–147 (1965). (Crys Structure; Experimental)
67Coh: B. G. Cohen, “X-Ray Measurement of Elastic Strain and Lattice Constant of Diffused Silicon”,Solid State Electron., 10, 33–37 (1967). (Crys Structure; Experimental)
Indicates key paper668Hes: J. Hesse, “Loeslichkeit und Ausscheidungskinetik von Bor in Polykristallinem Silizium (Solubility and Kinetics of Precipitation of Boron in Polycrystalline Silicon)”,Z. Metallkd., 59, 499–502 (1968) in German. (Crys Structure, Equi Diagram; Experimental)
70Ett: P. Ettmayer, H. C. Horn, and K. A. Schwetz, “Untersuchungen im System Silicium-Bor mit Hilfe der Elektronenstrahl-Mikroanalyse (Investigation of the Silicon-Boron System by Means of X-Ray Microanalysis)”,Mikrochim. Acta Suppl., 4, 87–95 (1970) in German. (Crys Structure, Equi Diagram; Experimental; Indicates presence of a phase diagram)
72Mcq: K. G. McQuhae and A. S. Brown, “The Lattice Contraction Coefficient of Boron and Phosphorus in Silicon”,Solid State Electron, 15, 259–264 (1972). (Crys Structure; Experimental)
72Por: K. I. Portnoi and V. M. Romashov, “Binary Constitution Diagrams of Systems Composed of Various Elements and Boron—a Review”,Poroshk. Metall., 5(113), 48–56 (1972) in Russian; TR:Sov. Powder Metall. Met. Ceram., 11, 378–384 (1972). (Equi Diagram; Experimental)
76Arm: B. Armas, C. Combescure, J. M. Dusseau, T. P. Lepetre, J. L. Robert, and B. Pistoulet, “Fabrication and Study of Electrical Properties of Boron-Silicon Compounds with High Boron Concentration”,J. Less-Common Met., 47, 135–140 (1976). (Meta Phases, Experimental)
77Bar: I. Barin, O. Knacke, and O. Kubaschewski,thermochemical Properties of Inorganic Substances, Springer-Verlag, New York (1977). (Thermo; Compilation)
77Cal: B. Callmer, “An Accurate Refinement of the β-Rhombohedral Boron Structure”,Acta. Crystallogr. B33, 1951–1954 (1977). (Crys Structure; Experimental)
Indicates key paper78Esi: Yu. O. Esin, S. P. Kolesnikov, V. M. Baev, and A. F. Ermakov, “Entalpij Obrazovanya Zhidkikh Splavov Kremnya s Borom (Enthalpies of Formation of Liquid Alloys of Silicon with Boron)”,Tezisy Nauchn. Soobshch. Vses. Konf. Str. Svoistvam Met. Shlakovykh Rasplavov, 3rd ed. Vol. 2, 182–183 (1978). (Thermo; Experimental)
78Lar: B. C. Larson, C. W. White, and B. R. Appleton, “Unidirectional Contraction in Boron-Implanted Laser-Annealed Silicon”,Appl. Phys. Lett., 32, 801–803 (1978). (Meta Phases; Experimental)
78Whi: C. W. White, W. H. Christie, B. R. Appleton, S. R. Wilson, P. P. Pronko, and C. W. Magee, “Redistribution of Dopants in Ion-Implanted Silicon by Pulsed-Laser Annealing”,Appl. Phys. Lett., 33, 662–664 (1978). (Meta Phases; Experimental)
79Ara: B. G. Arabey, “Vzaimodeystvie v Sisteme Si−B (Interaction in the Si−B System)”,Izv. Akad. Nauk. SSSR Neorg. Mater., 15, 1589–1592 (1979) in Russian. (Crys Structure, Equi Diagram; Experimental; Indicates presence of a phase diagram)
79Arm: B. Armas, C. Combescure, G. Male, and M. Morales, “A Study of the Thermal Decomposition of Gaseous Si−B Bromides under Reduced Pressure”,J. less-common Met., 67, 449–453 (1979). (Meta Phases; Experimental)
Indicates key paper80Vial: J. C. Viala and J. Bouix, “Alliages Bore-Silicium Riches en Bore. Partie I”,J. Less-Common Met., 71, 195–206 (1980). (Equi Diagram, Crys Structure; Experimental)
80Via2: J. C. Viala, R. Hillel, and J. Bouix, “Alliages Bore Silicium Riches en Bore. Partie II”,J. Less-Common Met., 71, 207–218 (1980). (Crys Structure; Experimental)
Indicates key paper81Arm1: B. Armas, G. Malé, and D. Salanoubat, “Determination of the Boron-Rich Side of the B−Si Phase Diagram”,J. Less-Common Met., 82, 245–254 (1981). (Equi Diagram, Crys Structure; Experimental; Indicates presence of a phase diagram)
81Arm2: B. Armas, C. Chatillon, and M. Allibert, “Determination des Activites dans le Systeme Bore-Silicium par Spectrometrie de Masse Differentielle”,Rev. Int. Hautes Temp. Refract., 18, 153–165 (1981). (Thermo; Experimental)
81Kin: H. W. King, “Crystal Structures of the Elements at 25°C”,Bull. Alloy Phase Diagrams, 2(3), 401–402 (1981). (Crys Structure; Compilation)
Indicates key paper81Mal: G. Male and D. Salanoubat, “Sur l'Existence d'Une Phase Riche en Bore dans le Systeme Bore-Silicium”,Rev. Int. Hautes Temp. Refract., 18, 109–120 (1981). (Equi Diagram; Experimental; Indicates presence of a phase diagram)
81Vla: M. Vlasse and J.C. Viala, “The Boron-Silicon Solid Solution: A Structural Study of the SiB36 Composition”,J. Solid State Chem., 37, 181–188 (1981). (Crys Structure; Experimental)
82Chu: T.A. Chubinidze, A.L. Okley, and M.A. Zhuruli, “Ob Energii Vzaimodeystvya v Sisteme Si−B (On the Interaction Energy in the Si−B System)”,Izv. Akad. Nauk SSSR. Met., 199–201 (1982). (Thermo; Theory)
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This program was supported by ASM under grant No. FG101-1 to the University of Florida. Thermodynamic calculations were made by using the computer program developed by Drs. A.D. Pelton, W.T. Thompson, and C.W. Bale of McGill University, Montreal, Quebec. Literature was searched through 1982. Professor G.J. Abbaschian is the ASM/NBS Data Program Category Editor for binary silicon alloys.
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Olesinski, R.W., Abbaschian, G.J. The B−Si (Boron-Silicon) system. Bulletin of Alloy Phase Diagrams 5, 478–484 (1984). https://doi.org/10.1007/BF02872900
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DOI: https://doi.org/10.1007/BF02872900