Abstract
The number of physical effects that have to be taken into account to accurately model and design current and future micro- and nano-electronics devices is continuously increasing. At the same time, the importance of the coupling among them is increasing as well. An accurate simulation of such effects with strong interactions is often non-trivial and in many cases a satisfactory solution is not yet available. Two challenging problems are presented in more detail: the first one refers to the thermomechanical problem of silicon oxidation, the second is the electrical coupling which occurs in strained silicon substrate.
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© 2007 Springer-Verlag Berlin Heidelberg
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Marmiroli, A., Carnevale, G., Ghetti, A. (2007). Technology and Device Modeling in Micro and Nano-electronics: Current and Future Challenges. In: Ciuprina, G., Ioan, D. (eds) Scientific Computing in Electrical Engineering. Mathematics in Industry, vol 11. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-71980-9_3
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DOI: https://doi.org/10.1007/978-3-540-71980-9_3
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-71979-3
Online ISBN: 978-3-540-71980-9
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