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Keywords
- Polar Axis
- Morphotropic Phase Boundary
- Remanent Polarization
- High Transition Temperature
- Interdigital Electrode
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
References
F. D. Bannon, J. R. Clark, C. T. C. Nguyen, IEEE J. Sol. State Circuits 35(2.4), 512 (2000).
L. W. Lin, R. T. Howe, A. P. Pisano, J. MEMS 7(2.3), 286 (1998).
L. Pescini, H. Lorenz, R. H. Blick, Appl. Phys. Lett 82(2.3), 352 (2003).
M. A. Abdelmoneum, M. U. Demirci, C.T.-C. Nguyen, The Sixteenth Annual International Conference on Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE, 698 (2003).
Y. Ito, K. Kushida, K. Sugawara, H. Takeuchi, IEEE TUFFC 42 316 (1995).
M. A. Dubois and P. Muralt, Appl. Phys. Lett. 74, 3032 (1999).
S. H. Kim, J.H. Kim, H. D. Park, and G. W. Yoon, J. Vac. Sci. Tech. B 19, 1164 (2001).
M. Umeda, K. Nakamura, and S. Ueha, Jpn. J. Appl. Phys. Part 1 36 (5B): 3146 (1997).
G. W. Taylor, J. R. Burns, S. M. Kammann, W. B. Powers, and T. R. Welsh, IEEE J. Ocean. Eng. 26(2.4), 539 (2001).
G. K. Ottman, H. F. Hofmann, G. A. Lesieutre, IEEE Trans. Power Electron. 18(2.2), 696 (2003).
P. Glynne-Jones, S. P. Beeby, N.M. White, IEE Proc. Sci. Meas. Tech., 148(2.2) 68 (2001).
J. J. Bernstein, S. L. Finberg, K. Houston, L. C. Niles, H. D. Chen, L. E. Cross, K. K. Li, and K. Udayakumar, IEEE Trans. UFFC,44, 960 (1997).
Y. Nemirovsky, A. Nemirovsky, P. Muralt, and N. Setter, Sen. and Act., A 56, 239 (1996).
P. Muralt, M. Kohli, T. Maeder, A. Kolkin, K. Brooks, N. Setter, and R. Luthier, Sen. and Act., A 48, 157 (1995).
P. Muralt, IEEE Trans. UFFC 47(2.4) 903 (2000).
D. L. Polla and L. F. Francis, MRS Bulletin, 21(7) 59 (1996).
L.-P. Wang, K. Deng, L. Zou, R. Wolf, R. J. Davis, and S. Trolier-McKinstry, IEEE Electron Device Lett. 23, 182 (2002).
J. F. Nye, Physical Properties of Crystals: Their Representation by Tensors and Matrices, (Clarendon Press, Oxford 1979).
T. Ikeda, Fundamentals of Piezoelectricity, (New York: Oxford University Press, 1996).
R. M. White and V.W. Voltmer, Appl. Phys. Lett. 17, 314 (1965).
K. Tsubouchi and N. Mikoshiba, IEEE Trans. Son. Ultrasonics 32, 634 (1985).
H. Nakahata, H. Kitabayashi, T. Uemura, A. Hachigo, K. Higaki, S. Fujii, Y. Seki, K. Yoshida, and S. Shikata, Jpn. J. Appl. Phys. Pt 1 37 2918 Sp. Iss. SI (1998).
G. F. Iriarte, J. Appl. Phys. 93, 9604 (2003).
I. Cerven, T. Lacko, I. Novotny, V. Tvarozek, M. Harvanka, J. Cryst. Growth 131(3–4): 546 (1993).
J. G. Smits and W. S. Choi, IEEE TUFFC 38(2.3), 256 (1991).
Q. Meng, M. Mehregany, K. Deng, J. Micromech. Microeng., 3, 18 (1993).
Ph. Luginbuhl, G.-A. Racine, Ph. Lerch, B. Romanowicz, K. G. Brooks, N.F. de Rooij, Ph. Renaud, and N. Setter, Int. Conf Solid-State Sens. Act., Proc., 1, 413 (1995).
T. Fabula, H. Wagner, B. Schmidt, S. Buttgenbach, Sens. Act. A 42(1–3), 375 (1994).
F. S. Hickernell, Proc. IEEE 64 631 (1976).
A. Rodriguez-Navarro, W. Otano-Rivera, J. M. Garcia—Ruiz, and R. Messier, J. Mater Res. 12 1850 (1997).
M. A. Dubois and P. Muralt, Appl. Phys. Lett. 74(20), 3032 (1999).
F. J. Hickernell, R.X. Yue, F.S. Hickernell, IEEE Trans. UFFC 44, 615 (1997).
H. P. Loebl, C. Metzmacher, R.F. Milsom, P. Lok, F. van Straten, A. Tuinhout, J. Electroceramics, forthcoming issue.
M.-A. Dubois, P. Muralt, J. Appl. Phys. 89, 6389 (2001).
A. Barker, S. Crowther, D. Rees, Sensors & Actuators 58, 229 (1997).
Kholkin AL, Wutchrich C, Taylor DV, Setter N, Rev. Sci. Instrum. 67(5), 1935 (1996).
J. F. Shepard, Jr., P. J. Moses, and S. Trolier-McKinstry, Sens. Actuators A 71 133 (1998).
M. A. Dubois and P. Muralt, Sens. Act. A 77(2.2), 106 (1999).
F. J. von Preissig, H. Zeng, E. S. Kim, Smart Mater Struct. 7, 396 (1998).
J. G. Gualtieri, J.A. Kosinski, A. Ballato, Trans. UFFC 41, 53 (1994).
G. Carlotti, G. Socino, A. Petri, and E. Verona, in Proc. 1987 IEEE Ultrason. Symp. Oct. 1987, p. 295.
K. Tsubouchi, K. Sugai, and N. Mikoshiba, IEEE Ultrason. Symp. Oct. 1981, pp. 375.
N. Ledermann, P. Muralt, J. Baborowski, S. Gentil, K. Mukati, M. Cantoni, A. Seifert and N. Setter, Sens. Act. A 105, 162 (2003).
D. Peroulis, S. P. Pacheco, K. Sarabandi, and L. P. B. Katehi, IEEE Trans. Microwave. Theory Tech. 51(10) 259 (2003).
F. Xu, S. Trolier-McKinstry, W. Ren, and B. Xu, J. Appl. Phys. 89(2.2), 1336 (2001).
K. Saito, T. Kurosawa, T. Akai, T. Oikawa, and H. Funakubo, J. Appl. Phys. 93(2.1) 545 (2003).
X. H. Du, J. H. Zheng, U. Belegundu, and K. Uchino, Appl. Phys. Lett. 72(19), 2421 (1998).
S.-E. Park, and T.R. Shrout, IEEE Trans. UFFC 44 1140 (1997).
B. Noheda, D. E. Cox, G. Shirane, R. Guo, B. Jones, L. E. Cross, Phys. Rev. B 63(2.1), 014103 (2001).
H. D. Chen, K. R. Udayakumar, C. J. Gaskey, and L. E. Cross, Appl. Phys. Lett. 67(23) 3411 (1995).
A. Seifert, N. Ledermann, S. Hiboux, J. Baborowski, P. Muralt, and N. Setter, Integr. Ferro. 35(1–4), 1889 (2001).
F. Xu, R. A. Wolf, T. Yoshimura, and S. Trolier-McKinstry, Proc. 11th Int. Symp. Electrets, 386 (2002).
R. Wolf and S. Trolier-McKinstry, J. Appl. Phys. 95(2.3), 1397 (2004).
Haccart T, Soyer C, Cattan E, Remiens D, Ferroelectrics 254(1—4), 185 (2001).
I. Kanno, H. Kotera, K. Wasa, T. Matsunaga, T. Kamada, and R. Takayama, J. Appl. Phys. 93(7), 4091 (2003).
D.-J. Kim, J.-P. Maria, A. I. Kingon, and S. K. Streiffer, J. Appl. Phys. 93, 5568 (2003).
R. E. Eitel, C. A. Randall, T. R. Shrout, P. w. Rehrig, W. Hackenberger, and S. E. Park, Jpn. J. Appl. Phys. Part 1 40(10) 5999 (2001).
T. R. Shrout, private communication (2002).
K. Kakimoto, H. Kakemoto, S. Fujita, and Y. Masuda, J. Am. Ceram. Soc. 85(2.4), 1019 (2002).
B. A. Tuttle, T. J. Garino, J. A. Voight, T. J. Headley, D. Dimos, M. O. Eatough, Science and Technology of Electroceramic Thin Films, ed. O Auciello, R Waser 117, Kluwer Academic Publishers, The Netherlands (1995).
A. L. Kholkin, M. L. Calzada, P. Ramos, and N. Setter, Appl. Phys. Lett. 69 3602 (1996).
P. Muralt, J. Micromech. Microeng. 10, 136 (2000).
K.G. Brooks, I.A. Reaney, R. Klissurska, Y. Huang, L. Bursill, N. Setter, J. Mater. Res. 9 2540 (1994).
S.-Y. Chen and I.-W. Chen, J. Amer. Cer. Soc. 77 2337 (1994).
R.W. Whatmore, Q. Zhang, Z. Huang, and R.A. Dorey, Materials Science in Semiconductor Processing 5 65 (2003).
J. H. Park, F. Xu, and S. Trolier-McKinstry, J. Appl. Phys. 89(2.1) 568 (2001).
T. Yoshimura and S. Trolier-McKinstry, unpublished.
T. Yoshimura and S. Trolier-McKinstry, Integr Ferroelectr 50, 33 (2002).
A. J. Bell, J. Appl. Phys. 89(7), 3907 (2001).
Q.Q. Zhang, Q. F. Zhou, and S. Trolier-McKinstry, Appl. Phys. Lett. 80(18), 3370 (2002).
Q. F. Zhou, Q. Q. Zhang, and S. Trolier-McKinstry, J. Appl. Phys. 94(5) 3397 (2003).
Z. Zhang, J-H. Park and S. Trolier-McKinstry, MRS. Proc. 596Ferroelectric Thin Films VIII, editors: R. W. Schwartz, P. C. McIntyre, Y. Miyasaka, S. R. Summerfelt, and D. Wouters, 73–77 Materials Research Society, Warrendale, PA (2000).
J.-P. Maria, J. F. Shepard, Jr., S. Trolier-McKinstry, T. R. Watkins, and A. E. Payzant, accepted, Int. J. Appl. Ceram. Tech. (2004).
J. F. Shepard Jr., S. Trolier-McKinstry, M. Hendrickson, and R. Zeto, MRS Proc. 459: Materials for Smart Systems 11 47–52 (1997).
N. Kim, Ph. D. Thesis, The Pennsylvania State University (1994).
F. Jona, and G. Shirane, Ferroelectric Crystals, Pergamon Press, New York (1962).
T. M. Shaw, S. Trolier-McKinstry, and P.C. McIntyre, Ann. Rev. Mater Sci. 30 263 (2000).
T. Yoshimura and S. Trolier-McKinstry, JAppl. Phys. 92(7), 3979 (2002).
J. Nino, T. Yoshimura and S. Trolier-McKinstry, J. Mat. Res. 19(2.2), 568 (2004).
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Trolier-McKinstry, S., Muralt, P. (2005). Thin Film Piezoelectrics for MEMS. In: Setter, N. (eds) Electroceramic-Based MEMS. Electronic Materials: Science and Technology, vol 9. Springer, Boston, MA. https://doi.org/10.1007/0-387-23319-9_10
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