Overview
- Provides an overview of non-volatile memory fundamentals
- Covers key memory technologies
- Written by experts from both academia and industry
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About this book
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.
This book also:
Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.
Provides an overview of non-volatile memory fundamentals.
Broadens readers’ understanding of future trends in non-volatile memories.
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Keywords
Table of contents (7 chapters)
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Front Matter
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Resistance and Phase Change Memories
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Front Matter
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Probe Memories
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Front Matter
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Editors and Affiliations
Bibliographic Information
Book Title: Emerging Non-Volatile Memories
Editors: Seungbum Hong, Orlando Auciello, Dirk Wouters
DOI: https://doi.org/10.1007/978-1-4899-7537-9
Publisher: Springer New York, NY
eBook Packages: Chemistry and Materials Science, Chemistry and Material Science (R0)
Copyright Information: Springer Science+Business Media New York 2014
Hardcover ISBN: 978-1-4899-7536-2Published: 19 November 2014
Softcover ISBN: 978-1-4899-7930-8Published: 22 September 2016
eBook ISBN: 978-1-4899-7537-9Published: 18 November 2014
Edition Number: 1
Number of Pages: XII, 273
Number of Illustrations: 44 b/w illustrations, 112 illustrations in colour
Topics: Optical and Electronic Materials, Solid State Physics, Spectroscopy and Microscopy, Electrical Engineering