Abstract
The electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes (LEDs) p +/n +/n-Si:Er, emitting under reverse bias on the p +/n + junction in the breakdown regime, have been investigated. The room-temperature emission power at the wavelength λ ≈ 1.5 μm (∼5 μW), external quantum efficiency (∼10−5), and excitation efficiency of erbium ions (∼2 × 10−20 cm2 s) have been determined. At the same excitation efficiency, tunnel transit-time LEDs exhibit higher emission power in comparison with p +/n-Si:Er diode structures. The experimental results are compared with the model predictions for these structures. The factors limiting the electroluminescence intensity and impact excitation efficiency for erbium ions in tunnel transit-time LEDs are discussed.
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Original Russian Text © V.B. Shmagin, V.P. Kuznetsov, K.E. Kudryavtsev, S.V. Obolensky, V.A. Kozlov, Z.F. Krasil’nik, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1533–1538.
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Shmagin, V.B., Kuznetsov, V.P., Kudryavtsev, K.E. et al. Electrical and luminescence properties of silicon-based tunnel transit-time light-emitting diodes p +/n +/n-Si:Er. Semiconductors 44, 1486–1491 (2010). https://doi.org/10.1134/S1063782610110217
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DOI: https://doi.org/10.1134/S1063782610110217