Abstract
The spontaneous-emission spectra in the near-IR range (0.8–1.3 μm) from inverted tunnel-injection nanostructures are measured. These structures contain an InAs quantum-dot layer and an InGaAs quantum-well layer, separated by GaAs barrier spacer whose thickness varies in the range 3–9 nm. The temperature dependence of this emission in the range 5–295 K is investigated, both for optical excitation (photoluminescence) and for current injection in p–n junction (electroluminescence). At room temperature, current pumping proves more effective for inverted tunnel-injection nanostructures with a thin barrier (<6 nm), when the apexes of the quantum dots connect with the quantum well by narrow InGaAs straps (nanobridges). In that case, the quenching of the electroluminescence by heating from 5 to 295 K is slight. The quenching factor S T of the integrated intensity I is S T = I 5/I 295 ≈ 3. The temperature stability of the emission from inverted tunnel-injection nanostructures is discussed on the basis of extended Arrhenius analysis.
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Original Russian Text © V.G. Talalaev, B.V. Novikov, G.E. Cirlin, H.S. Leipner, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 11, pp. 1531–1539.
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Talalaev, V.G., Novikov, B.V., Cirlin, G.E. et al. Temperature quenching of spontaneous emission in tunnel-injection nanostructures. Semiconductors 49, 1483–1492 (2015). https://doi.org/10.1134/S1063782615110214
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DOI: https://doi.org/10.1134/S1063782615110214