Abstract
The structural, optical, and energy properties of epitaxial Al x Ga1 – x As:Mg/GaAs(100) heterostructures at different levels of doping with Mg are studied by high-resolution X-ray diffraction analysis and Raman and photoluminescence spectroscopies. It is shown that, by choosing the technological conditions of Al x Ga1–x As:Mg alloy production, it is possible to achieve not only different conductivity types, but also substantially different charge-carrier concentrations in an epitaxial film.
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Original Russian Text © P.V. Seredin, A.S. Lenshin, I.N. Arsentiev, A.V. Zhabotinskii, D.N. Nikolaev, I.S. Tarasov, V.V. Shamakhov, Tatiana Prutskij, Harald Leiste, Monika Rinke, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 1, pp. 124–132.
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Seredin, P.V., Lenshin, A.S., Arsentiev, I.N. et al. Epitaxial Al x Ga1 – x As:Mg alloys with different conductivity types. Semiconductors 51, 122–130 (2017). https://doi.org/10.1134/S1063782617010213
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DOI: https://doi.org/10.1134/S1063782617010213