Abstract
The curve of the electron’s scattering intensity depending on the scattering angle has been obtained for amorphous films of Yb1−x Sm x As4S7 (x = 0.02 at %). The curve of the radial distribution of atoms has been built, and radii of coordination shells and partial coordination numbers have been determined. Kinetic parameters of phase transformations that occur upon the crystallization of amorphous films Yb1−x Sm x As4S7 (x = 0.02 at %) obtained both under normal conditions and under the effect of an external electric field have been established.
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Original Russian Text © E.Sh. Hajiyev, A.I. Madadzadeh, J.I. Ismayilov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 11, pp. 1534–1537.
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Hajiyev, E.S., Madadzadeh, A.I. & Ismayilov, J.I. Structure and kinetics of crystallization of thin amorphous films of Yb1−x Sm x As4S7 . Semiconductors 43, 1492–1495 (2009). https://doi.org/10.1134/S1063782609110153
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DOI: https://doi.org/10.1134/S1063782609110153