Abstract
We show that a sharp dependence of the Hall coefficient R on the magnetic field B arises in two-dimensional electron systems with strong scatterers. The phenomenon is due to classical memory effects. We calculate analytically the dependence of R on B for the case of scattering by antidots (modeled by hard disks of radius a), randomly distributed with concentration n 0 ≪ 1/a 2. We demonstrate that in very weak magnetic fields (ω c τtr ≲ n 0 a 2), memory effects lead to a considerable renormalization of the Boltzmann value of the Hall coefficient: δR/R ∼ 1. With increasing magnetic field, the relative correction to R decreases, then changes sign, and saturates at the value δR/R ∼ −n 0 a 2. We also discuss the effect of the smooth disorder on the dependence of R on B.
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Dmitriev, A.P., Kachorovskii, V.Y. Magnetotransport in a 2D system with strong scatterers: Renormalization of Hall coefficient caused by non-Markovian effects. Semiconductors 42, 934–939 (2008). https://doi.org/10.1134/S1063782608080113
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DOI: https://doi.org/10.1134/S1063782608080113