Abstract
The epitaxial growth of CdHgTe films is accompanied by the formation of V defects whose density and electronic properties greatly affect the characteristics of a terminal device based on the given material. Scanning atomic-force microscopy techniques are proposed to investigate how electronic properties vary in the V-defect region of an epitaxial CdHgTe film. It is experimentally demonstrated that variations in the component composition of individual crystallites generating V defects create not only the complex spatial distribution of a potential field but also a potential barrier along the crystallite periphery. The given barrier must alter the charge-carrier exchange between crystallites, appreciably changing the current distribution over the V-defect area.
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Original Russian Text © V.A. Novikov, D.V. Grigoryev, A.V. Voitsekhovskii, S.A. Dvoretsky, N.N. Mikhailov, 2016, published in Poverkhnost’, 2016, No. 10, pp. 108–112.
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Novikov, V.A., Grigoryev, D.V., Voitsekhovskii, A.V. et al. Investigation of the surface-potential distribution of epitaxial CdHgTe films. J. Surf. Investig. 10, 1096–1100 (2016). https://doi.org/10.1134/S1027451016050372
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DOI: https://doi.org/10.1134/S1027451016050372