Abstract
Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd x Hg1 − x Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential difference. It is shown that the solid-solution composition varies by ∼0.05 (2.5 at %) towards increasing mercury content in the V-defect region, and a region of mercury depletion by 0.36 at % is observed at the V-defect periphery. From analysis of the surface-potential distribution, it is shown that the Cd x Hg1 − x Te epitaxial film contains unform V-defects with a diameter less than 1 μm in addition to macroscopic V-defects.
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Original Russian Text © V.A. Novikov, D.V. Grigoryev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 3, pp. 319–322.
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Novikov, V.A., Grigoryev, D.V. Investigation of surface potential in the V-defect region of MBE Cd x Hg1 − x Te film. Semiconductors 49, 309–312 (2015). https://doi.org/10.1134/S106378261503015X
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DOI: https://doi.org/10.1134/S106378261503015X