Abstract
Boron diffusion and the vapor-phase deposition of silicon layers are used to prepare ultrashallow p +-n junctions and p +-Si-n-CdF2 heterostructures on an n-CdF2 crystal surface. Forward portions of the I–V characteristics of the p +-n junctions and p +-Si-n-CdF2 heterojunctions reveal the CdF2 band gap (7.8 eV), as well as allow the identification of the valence-band structure of cadmium fluoride crystals. Under conditions in which forward bias is applied to the p +-Si-n-CdF2 heterojunctions, electroluminescence spectra are measured for the first time in the visible spectral region.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 39, No. 5, 2005, pp. 557–562.
Original Russian Text Copyright © 2005 by Bagraev, Klyachkin, Malyarenko, Ryskin, Shcheulin.
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Bagraev, N.T., Klyachkin, L.E., Malyarenko, A.M. et al. p +-Si-n-CdF2 heterojunctions. Semiconductors 39, 528–532 (2005). https://doi.org/10.1134/1.1923559
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DOI: https://doi.org/10.1134/1.1923559