Abstract
Based on the analysis of the forward current-voltage characteristics of the p-InSb–n-CdTe heterojunction fabricated by a method of pulsed laser deposition, the existence of two charge injection mechanisms was experimentally confirmed. At relatively small external bias voltages (0.03 V < U < 0.15 V), the current is in a satisfactory agreement with the expression I ~ exp(qU/ηkT) with the ideality factor η = 1. Above 0.18 V, the current-voltage characteristic obeys the law I ~ U3/2 followed by an attainment to the linear section (the cut-off voltage of current is 0.47 V). A theoretical model of current transport is given taking into account the peculiarities of the heterojunction band discontinuity, leading to the origination of inversion layer near the interface.
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Acknowledgements
The work was performed in the joint laboratory of the Institute of Radiophysics and Electronics of the National Academy of Sciences of the Republic of Armenia and the Russian-Armenian University with the financial support of the Ministry of Education and Science of the Russian Federation.
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Russian Text © The Author(s), 2019, published in Izvestiya Natsional’noi Akademii Nauk Armenii, Fizika, 2019, Vol. 54, No. 2, pp. 198–205.
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Petrosyan, S.G., Matevosyan, L.M., Avjyan, K.E. et al. Current Transport Mechanism in p-InSb–n-CdTe Heterojunction. J. Contemp. Phys. 54, 146–152 (2019). https://doi.org/10.3103/S1068337219020051
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DOI: https://doi.org/10.3103/S1068337219020051