Abstract
Using the method of measuring and analyzing the capacitance-voltage characteristics, it is found that the n-6H-SiC/p-(SiC)1−x (AlN)x heterostructures obtained by sublimation epitaxy of the (SiC)1−x (AlN)x layers on the 6H-SiC substrates have abrupt heterojunctions ∼10−4 cm thick. The basic properties of heterostructures, which depend on the epilayer composition and temperature, were determined from the capacitance-voltage characteristics.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 2, 2001, pp. 216–218.
Original Russian Text Copyright © 2001 by Kurbanov, Bilalov, Nurmagomedov, Safaraliev.
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Kurbanov, M.K., Bilalov, B.A., Nurmagomedov, S.A. et al. Investigation of the SiC/(SiC)1−x (AlN)x heterostructures by the method of capacitance-voltage characteristics. Semiconductors 35, 209–211 (2001). https://doi.org/10.1134/1.1349934
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DOI: https://doi.org/10.1134/1.1349934