Abstract
Formulas are derived for the longitudinal and transverse electron momentum relaxation times in a superlattice consisting of weakly interacting quantum wells in the approximation of a bulk-semiconductor scattering potential. Scattering by impurity ions, neutral atoms, and volume-type longitudinal acoustic and polar optical phonons is studied. A numerical analysis is performed of the longitudinal and transverse momentum relaxation times for scattering by impurity ions and neutral atoms as a function of the electron energy, temperature, density of the electron gas, and quantum well width.
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Fiz. Tekh. Poluprovodn. 33, 1240–1245 (October 1999)
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Borisenko, S.I. Momentum relaxation time and temperature dependence of electron mobility in semiconductor superlattices consisting of weakly interacting quantum wells. Semiconductors 33, 1128–1132 (1999). https://doi.org/10.1134/1.1187881
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DOI: https://doi.org/10.1134/1.1187881