Abstract
The statistical delay of microplasma breakdown in GaP light-emitting diodes with the green-emission spectrum is studied. The unusual profound effect of deep centers on the statistical delay of avalanche breakdown is observed in the temperature range of 300–380 K; this effect is caused by a variation in the charge state of these centers due to a reduction in the reverse bias applied to the p–n junction. Four deep levels are revealed and their parameters are determined.
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Original Russian Text © V.K. Ionychev, A.A. Shesterkina, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 3, pp. 386–389.
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Ionychev, V.K., Shesterkina, A.A. A study of deep centers in microplasma channels in GaP light-emitting diodes with green-emission spectrum. Semiconductors 51, 370–373 (2017). https://doi.org/10.1134/S1063782617030083
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DOI: https://doi.org/10.1134/S1063782617030083