Abstract
In situ experiments on the Co/SiC interface reaction were carried out with a high temperature X-ray diffractometer capable of measuring the X-ray diffraction pattern in 1–4s using an imaging plate. The kinetic formation processes of the interface reaction layer were measured in short-period exposure experiments with the apparatus. The time-temperature phase diagram of Co/SiC in N2was determined. Co2Si and CoSi were formed at the Co/SiC interface between 921 and 1573 K in N2. The formation of CoSi obeyed the parabolic rate law. The value of the activation energy was 95 kJ/mol. The results of thermal expansion coefficient measurements suggest that when a sample is cooled to room temperature, compressive strain caused by CoSi occurs on SiC.
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Fujimura, T., Tanaka, SI. In-situ high temperature X-ray diffraction study of Co/SiC interface reactions. Journal of Materials Science 34, 5743–5747 (1999). https://doi.org/10.1023/A:1004750016287
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DOI: https://doi.org/10.1023/A:1004750016287