Abstract
The numerical evaluation performed on the design of n-ln2S3/p-Si/p+-NiO solar cell reveals that it can come up with a high efficiency gain along with substantial values in other photovoltaic parameters. The pristine n-ln2S3/p-Si structure imparts a power conversion efficiency, PCE of 23.24%. The selection of NiO in back surface field (BSF) layer makes an improvement of ~ 0.1 V in open circuit voltage, VOC and a slight improvement in short circuit current density, JSC. Under single sun and AM 1.5G spectrum, the optimum thickness (Window = 0.2 μm, Base = 350 μm, BSF = 0.2 μm), doping concentration (Windowdonor = 1.0 × 1018 cm−3, Baseacceptor = 1.0 × 1017 cm−3, BSFacceptor = 1.0 × 1020 cm−3) and defect density (Window = 1.0 × 1014 cm−3, Base = 1.0 × 1012 cm−3, BSF = 1.0 × 1014 cm−3) provide an enhanced PCE of 26.74% with the application of NiO as BSF in the pristine structure. The other photovoltaic parameters results with VOC = 0.79 V, JSC = 40.37 mA/cm2 and FF = 83.85%. Insertion of a thin and optimized NiO reduces recombination at the back surface by a potential barrier that enhances VOC and current in the device. Such a cost-effective solar cell exhibits enough possibility of fabricating a highly efficient, reliable and promising performance device.
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26 March 2024
A Correction to this paper has been published: https://doi.org/10.1007/s12633-024-02958-1
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Acknowledgements
The SCAPS simulation program was provided by Dr. Marc Burgelman of the University of Gent in Belgium, for which the authors are very grateful.
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Nusrat Jahan Konok and Shaikh Khaled Mostaque prepared the original draft, data collection and analysis; Jaker Hossain conceptualized, validated data, supervised and wrote and reviewed the manuscript.
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Konok, N.J., Mostaque, S.K. & Hossain, J. Design of a High Efficiency p-Si Based Heterojunction Solar Cell with ln2S3 Window and NiO BSF Layers. Silicon 16, 3461–3470 (2024). https://doi.org/10.1007/s12633-024-02940-x
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DOI: https://doi.org/10.1007/s12633-024-02940-x