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Recently, [2011Zha] determined an isothermal section for this ternary system at 500 °C.
Binary Systems
The Al-Gd system [2003Cac, Massalski2] has the following intermediate phases: Al3Gd (D019, Ni3Sn-type hexagonal), Al2Gd (C15, MgCu2-type cubic), AlGd (ErAl-type orthorhombic), Al2Gd3 (Al2Zr3-type tetragonal), and AlGd2 (C23, Co2Si-type orthorhombic). The Al-V phase diagram [2004Gon, Massalski2] depicts five intermetallic compounds: Al8V5 (D82, Cu5Zn8-type cubic), Al3V (D022, TiAl3-type tetragonal), Al23V4 (hexagonal), Al45V7 (monoclinic), and Al21V2 (cubic). There are no intermediate phases in the Gd-V system [Massalski2].
Ternary Isothermal Section
With starting metals of 99.99% Al, 99.9% Gd and 99.9% V, [2011Zha] arc-melted a number of alloys, which were homogenized and given a final anneal at 500 °C for 240 h and quenched in liquid nitrogen. The phase equilibria were studied with x-ray powder diffraction and scanning electron microscopy with energy dispersive analysis. Two ternary compounds Al43V4Gd6 (Al43Mo4Ho6-type hexagonal with lattice parameters of a = 1.0996 nm and c = 1.7813 nm; denoted τ1 here) and Al20V2Gd (Al20Cr2Ce-type cubic with a = 1.456 nm; denoted τ2) were found. The isothermal section constructed by [2011Zha] at 500 °C is shown in Fig. 1. The binary compounds Al2Gd3, AlGd and Al2Gd show a solubility of 1-2 at.% V. The other binary compounds do not show any ternary solubility.
References
G. Cacciamani, S. De Negri, A. Saccone, and R. Ferro, The Al-R-Mg (R = Gd, Dy, Ho) Systems. Part II: Thermodynamic Modeling of the Binary and Ternary Systems, Intermetallics, 2003, 11(11-12), p 1135-1151
W. Gong, Y. Du, B. Huang, R. Schmid-Fetzer, C. Zhang, and H. Xu, Thermodynamic Reassessment of the Al-V System, Z. Metallkd., 2004, 95(11), p 978-986
Y. Zhan, Z. Yang, H. Mo, and Y. Du, Phase Equilibria of the Al-V-RE (RE = Gd, Ho) Systems at 773 K (500 °C), Metall. Mater. Trans. A, 2012, 43(1), p 29-36
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Raghavan, V. Al-Gd-V (Aluminum-Gadolinium-Vanadium). J. Phase Equilib. Diffus. 33, 62–63 (2012). https://doi.org/10.1007/s11669-012-9983-5
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DOI: https://doi.org/10.1007/s11669-012-9983-5