Abstract
We have examined the performance and hot-carrier stress reliability of n-channel polycrystalline silicon (poly-Si) thin film transistors (TFTs) on RCA-leached glass. We have found out that the TFT’s performance and reliability are improved by RCA-leaching of the glass when compared to TFTs on bare glass due to the formation of a silica-rich layer on the glass surface by the RCA-leaching. The silica-rich layer acts as a barrier for impurity diffusion from glass as well as it modifies the poly-Si/glass interface which determines the physical structure of the active poly-Si.
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Wang, Y.Z., Awadelkarim, O.O. The effects of glass-substrate’s surface-treatment on the characteristics of N-channel polycrystalline silicon thin film transistors. J. Electron. Mater. 27, L77–L80 (1998). https://doi.org/10.1007/s11664-998-0084-5
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DOI: https://doi.org/10.1007/s11664-998-0084-5