Abstract
We have investigated the structure and shape of GaN-based nanowires grown on (001) Si substrates for optoelectronic device applications. The nanowire heterostructures contained InN disks and In0.4Ga0.6N barrier layers in the active region. The resulting nanowire array comprised two differently shaped nanowires: shorter pencil-like nanowires and longer bead-like nanowires. The two different nanowire shapes evolve due to a variation in the In incorporation rate, which was faster for the bead-like nanowires. Both types of nanowires exhibited evidence of significant migration of both Ga and In during growth. Ga tended to diffuse away and down along the sidewalls, resulting in a Ga-rich shell for all nanowires. Despite the complex structure and great variability in the In composition, the optical properties of the nanowire arrays were very good, with strong luminescence peaking at ∼ 1.63 μm.
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Acknowledgements
The work was supported by the National Science Foundation, MRSEC Program, under Grant DMR-1120923 and financially by the University of Michigan College of Engineering. The authors acknowledge Dr. K. Sun and help provided by the Michigan Center for Materials Characterization through use of instruments and staff assistance.
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Yan, L., Hazari, A., Bhattacharya, P. et al. Shape Evolution of Highly Lattice-Mismatched InN/InGaN Nanowire Heterostructures. J. Electron. Mater. 47, 966–972 (2018). https://doi.org/10.1007/s11664-017-5986-7
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DOI: https://doi.org/10.1007/s11664-017-5986-7