Abstract
The problem of defect formation in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy is discussed. The effect of growth conditions (temperature and flux ratio between the elements of groups III and V) on the morphology of growth surface, internal structure, type, and concentration of electrically-and optically active defects is analyzed. A comparison is made between the defect formation processes occuring during the epitaxial growth and post-growth annealing of the layers.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
F. W. Smith, A. R. Calawa, Chang-Lee Chen, et al., IEEE Electron Devices Lett., 9, 77–79 (1988).
M. Kaminska, Z. Liliental-Weber, E. R. Weber, et al., Appl. Phys. Lett., 54, 1881–1883 (1989).
A. C. Warren, J. M. Woodal, J. L. Freeouf, et al., Appl. Phys. Lett., 57, 1331–1333 (1990).
D. C. Look, D. C. Valters, M. O. Manasreh, et al., Phys. Rev. B., 42, 3578–3580 (1990).
Kin Man Yu, M. Kaminska, Z. Liliental-Weber, et al., J. Appl. Phys., 72, No. 7, 2850–2856 (1992).
N. A. Bert, A. I. Veinger, M. D. Vilisova, et al., Fiz. Tverd. Tela, 35, No. 10, 2609–2625 (1993).
I. A. Bobrovnikova, A. I. Veinger, M. D. Vilisova, et al., Russ. Phys. J., No. 9, 885–893 (1998).
M. D. Vilisova, I. V. Ivonin, L. G. Lavrentieva, et al., Fiz. Tekh. Poluprovodn., 33, No. 8, 824–829 (1999).
I. A. Bobrovnikova, M. D. Vilisova, I. V. Ivonin, et al., Russ. Phys. J., No. 10, 816 (2000).
M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, et al., Fiz. Tekh. Poluprovodn., 36, No. 9, 1025–1030 (2002).
B. R. Semyagin, M. A. Putyato, V. V. Prebrazhenskii, et al., Proc. 8th Russ. Conf. on Gallium Arsenide and III–V Semiconductor Compounds, Tomsk, 2002.
M. D. Vilisova, I. V. Ivonin, L. G. Lavrent’eva, et al., Izv. Vyssh. Uchebn. Zaved. Mater. Electronn. Tekh., No. 4, 44–47 (2002).
Ivonin I., Subatch S., Gutakovskii, et al., Proc. 5 Multinat. Congr. Electron Micr., Lecce (Italy), Rinton Press, Prinston, 2001.
M. D. Vilisova, L. L. Devyat’yarova, I. V. Ivonin et al., Proc. 8th Russ. Conf. On Gallium Arsenide and III–V Semiconductor Compounds, Tomsk, 2002.
M. D. Vilisova, I. V. Ivonin, L. G. Lavrent’eva, et al., Proc. 8th Russ. Conf. On Gallium Arsenide and III–V Semiconductor Compounds, Tomsk, 2002.
L. G. Lavrent’eva, M. D. Vilisova, V. V. Preobrazhenskii, et al., Russ. Phys. J., No. 8, 735 (2002).
A. Suda and N. Otsuka, Surf. Sci., 458, 162–173 (2000).
M. Missous and S. O’Hagan, J. Appl. Phys., 75, No. 7, 3396–3401 (1994).
S. O’Hagan and M. Missous, J. Appl. Phys., 75, No. 12, 7835–7841 (1994).
M. Missous and S. O’Hagan, J. Cryst. Growth, 175/176, 197–202 (1997).
M. G. Mil’vidskii and V. B. Osvenskii, Structural Defects in Single-Crystal Semiconductors [in Russian], Metallurgiya, Moscow, 1984.
D. T. J. Hurle, J. Appl. Phys., 85, No. 10, 6957–7022 (1999).
X. Liu, A. Prasad, and W. M. Chen, Appl. Phys. Lett., 65, No. 23, 3002–3004 (1994).
X. Liu, A. Prasad, J. Nishio, et al., Appl. Phys. Lett., 67, No. 2, 279–281 (1995).
M. Luysberg, H. Sohn, A. Prasad, et al., J. Appl. Phys., 83, No. 1, 561–565 (1998).
J. Betko, M. Morvic, J. Novak, et al., Appl. Phys. Lett., 69, No. 17, 2563–2565 (1996).
J. Gebauer, F. Borner, R. Krause-Rehberg, et al., J. Appl. Phys., 87, No. 12, 8368–8379 (2000).
T. Laine, K. Saarinen, Hautojarvi, et al., J. Appl. Phys., 86, No. 4, 1888–1897 (1999).
N. D. Zakharov, Z. Liliental-Weber, W. Swider, et al., Appl. Phys. Lett., 63, 2809–2811 (1993).
H. Kunzel, J. Bottcher, R. Gibis, et al., Appl. Phys. Lett., 61, 1347–1349 (1992).
R. A. Metzger, A. S. Brown, L. G. McCray, et al., J. Vac. Technol., B11, No. 3, 798–801 (1993).
Yu. S. Gordeev, V. M. Mikushkin, S. Yu. Nikonov, et al., Fiz. Tverd. Tela, 38, No. 11, 3299–3307 (1996).
L. Hollan and C. Shiller, J. Cryst. Growth, 22, No. 3, 175–180 (1974).
M. Gandouzi, J. C. Bourgoin, L. El Mir, et al., J. Cryst. Growth, 234, 279–284 (2002).
Author information
Authors and Affiliations
Additional information
__________
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 63–72, December, 2006.
Rights and permissions
About this article
Cite this article
Lavrentieva, L.G., Vilisova, M.D., Bobrovnikova, I.A. et al. Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy. Russ Phys J 49, 1334–1343 (2006). https://doi.org/10.1007/s11182-006-0263-x
Received:
Issue Date:
DOI: https://doi.org/10.1007/s11182-006-0263-x