The Varshni parameters of the temperature dependence of the bandgap energy in the range 10–313 K and the temperature dependence of the spin–orbit splitting energy have been calculated using experimental data obtained for an InAs0.88Sb0.12 active layer. Amplified luminescence was observed in the range 10–35 K for LEDs based on InAs0.88Sb0.12/InAsSbP heterostructures. The sharp drop in radiation intensity of InAsSb/InAsSbP LEDs at temperatures >32 K was due to extensive growth of the CHCC Auger-recombination process while the CHSH process was the dominant Auger-recombination process at temperatures <35 K.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 84, No. 5, pp. 786–793, September–October, 2017.
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Kabanau, D.M., Lebiadok, Y.V. & Yakovlev, Y.P. Auger Recombination and Amplified Luminescence in InAsSb/InAsSbP Leds at 10–60 K. J Appl Spectrosc 84, 843–849 (2017). https://doi.org/10.1007/s10812-017-0554-8
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DOI: https://doi.org/10.1007/s10812-017-0554-8