Abstract
The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.
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Original Russian Text © K.D. Mynbaev, N.L. Bazhenov, A.A. Semakova, M.P. Mikhailova, N.D. Stoyanov, S.S. Kizhaev, S.S. Molchanov, A.P. Astakhova, A.V. Chernyaev, H. Lipsanen, V.E. Bougrov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 2, pp. 247–252.
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Mynbaev, K.D., Bazhenov, N.L., Semakova, A.A. et al. Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K. Semiconductors 51, 239–244 (2017). https://doi.org/10.1134/S1063782617020117
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DOI: https://doi.org/10.1134/S1063782617020117