Abstract
ZnO nanorods have been grown by two inexpensive, solution-based, low-temperature methods: hydrothermal growth and electrodeposition. Heterojunction n-ZnO nanorods/p-GaN light-emitting diodes have been studied for different nanorod growth methods and different preparation of the seed layer. We demonstrate that both the nanorod properties and the device performance are strongly dependent on the growth method and seed layer. All the devices exhibit light emission under both forward and reverse bias, and the emission spectra can be tuned by ZnO nanorod deposition conditions. Electrodeposition of rods or a seed layer results in yellow emission, while conventional hydrothermal growth results in violet emission.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
A.B. Djurišić, Y.H. Leung, Small 2, 944 (2006)
X.-M. Zhang, M.-Y. Lu, Y. Zhang, L.-J. Chen, Z.L. Wang, Adv. Mater. 21, 2767 (2009)
E. Lai, W. Kim, P.D. Yang, Nano Res. 1, 123 (2008)
S.-H. Hwang, T.-H. Chung, B.-T. Lee, Mat. Sci. Eng. B 157, 32 (2009)
T.P. Yang, H.C. Zhu, J.M. Bian, J.C. Sun, X. Dong, B.L. Zhang, H.W. Liang, X.P. Li, Y.G. Cui, G.T. Du, Mater. Res. Bull. 43, 3614 (2008)
R. Guo, J. Nishimura, M. Matsumoto, M. Higashihata, D. Nakamura, T. Okada, Appl. Phys. B 94, 33 (2009)
J.W. Sun, Y.M. Lu, Y.C. Liu, D.Z. Shen, Z.Z. Zhang, B.H. Li, J.Y. Zhang, B. Yao, D.X. Zhao, X.W. Fan, J. Phys. D, Appl. Phys. 41, 155103 (2008)
L. Zhao, C.S. Xu, Y.X. Liu, C.L. Shao, X.H. Li, Y.C. Liu, Appl. Phys. B 92, 185 (2008)
R.W. Chuang, R.-X. Wu, L.-W. Lai, C.-T. Lee, Appl. Phys. Lett. 91, 231113 (2007)
C.P. Chen, M.Y. Ke, C.C. Liu, Y.J. Chang, F.H. Yang, J.J. Huang, Appl. Phys. Lett. 91, 091107 (2007)
M.-C. Jeong, B.-Y. Oh, M.-H. Ham, S.W. Lee, J.M. Myong, Small 3, 568 (2007)
Ya.I. Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, B.M. Ataev, Appl. Phys. Lett. 83, 2943 (2003)
W.I. Park, G.-C. Yi, Adv. Mater. 16, 87 (2004)
S.-H. Park, S.-H. Kim, S.-W. Han, Nanotechnology 18, 055608 (2007)
M.-C. Jeong, B.-Y. Oh, M.-H. Ham, J.M. Myong, Appl. Phys. Lett. 88, 202105 (2006)
D.J. Rogers, F. Hosseini Teherani, A. Yasan, K. Minder, P. Kung, M. Razeghi, Appl. Phys. Lett. 88, 141918 (2006)
H.Y. Xu, Y.C. Liu, Y.X. Liu, C.S. Xu, C.L. Shao, R. Mu, Appl. Phys. B 80, 871 (2005)
Q. Qin, L.-W. Guo, Z.-T. Zhou, H. Chen, X.-L. Du, Z.-X. Mei, J.-F. Jia, Q.-K. Xue, J.-M. Zhou, Chin. Phys. Lett. 22, 2298 (2005)
M.K. Wu, Y.T. Shih, W.C. Li, H.C. Chen, M.J. Chen, H. Kuan, J.R. Yang, M. Shiojiri, IEEE Photon. Technol. Lett. 20, 1772 (2008)
A.M.C. Ng, Y.Y. Xi, Y.F. Hsu, A.B. Djurišić, W.K. Chan, S. Gwo, H.L. Tam, K.W. Cheah, P.W.K. Fong, H.F. Lui, C. Surya, Nanotechnology 20, 445201 (2009)
I.E. Titkov, A.S. Zubrilov, L.A. Delimova, D.V. Mashovets, I.A. Liniicuk, I.V. Grekhov, Semiconductors 41, 564 (2007)
I.E. Titkov, L.A. Delimova, A.S. Zubrilov, N.V. Seredova, I.A. Liniicuk, I.V. Grekhov, J. Mod. Opt. 56, 653 (2009)
X.Y. Chen, A.M.C. Ng, F. Fang, A.B. Djurišić, W.K. Chan, H.L. Tam, K.W. Cheah, P.W.K. Fong, H.F. Lui, C. Surya, J. Electrochem. Soc. 157, H308 (2010)
S.H. Hwang, T.H. Chung, B.T. Lee, Mater. Sci. Eng. B 157, 32 (2009)
Y.F. Hsu, Y.Y. Xi, K.H. Tam, A.B. Djurišić, J. Luo, C.C. Ling, C.K. Cheung, A.M.C. Ng, W.K. Chan, X. Deng, C.D. Beling, S. Fung, K.W. Cheah, P.W.K. Fong, C. Surya, Adv. Func. Mater. 18, 1020 (2008)
L.E. Greene, M. Law, D.H. Tan, M. Montano, J. Goldberger, G. Somorjai, P.D. Yang, Nano Lett. 5, 1231 (2005)
J.-S. Huang, C.-F. Lin, J. Appl. Phys. 103, 014304 (2008)
L.E. Greene, M. Law, J. Goldberger, F. Kim, J.C. Johnson, Y.F. Zhang, R.J. Saykally, P.D. Yang, Angew. Chem. Int. Ed. 42, 3031 (2003)
J. Song, S. Lim, J. Phys. Chem. C 111, 596 (2007)
Y.F. Tao, M. Fu, A.L. Zhao, D.W. He, Y.S. Wang, J. Alloys Compd. 489, 99 (2010)
A.B. Djurišić, Y.H. Leung, K.H. Tam, Y.F. Hsu, L. Ding, W.K. Ge, Y.C. Zhong, K.S. Wong, W.K. Chan, H.L. Tam, K.W. Cheah, W.M. Kwok, D.L. Phillips, Nanotechnology 18, 095702 (2007)
I.M. Huygens, W.P. Gomes, K. Strubbe, J. Electrochem. Soc. 153, G72 (2006)
M.A. Reshchikov, H. Morkoç, J. Appl. Phys. 97, 061301 (2005)
K.K. Ng, Complete Guide to Semiconductor Devices (Wiley, New York, 2002)
G. Li, T.F. Zhou, D.D. Hu, Y.P. Pao, Y. Hou, X.G. Li, Appl. Phys. Lett. 91, 163114 (2007)
T. Phetchakul, H. Kimura, Y. Akiba, T. Kurosu, M. Iida, Jpn. J. Appl. Phys. 35, 4247 (1996)
I. Mora-Seró, F. Fabregat-Santiago, B. Denier, J. Bisquert, R. Tena-Zaera, C. Lévy-Clément, Appl. Phys. Lett. 89, 203117 (2006)
M. Law, L.E. Greene, J.C. Johnson, R.J. Saykally, P.D. Yang, Nat. Mater. 4, 455 (2005)
N.I. Bochkareva, E.A. Zhirnov, A.A. Efremov, Yu.T. Rebane, R.I. Gorbunov, A.V. Klochkov, D.A. Lavrinovich, Yu.G. Shreter, Semiconductors 39, 795 (2005)
D.C. Oh, T. Suzuki, J.J. Kim, H. Makino, T. Hanada, M.W. Cho, T. Yao, H.J. Ko, Appl. Phys. Lett. 87, 162104 (2005)
T. Nakayama, M. Murayama, J. Cryst. Growth 214/215, 299 (2000)
H.F. Liu, G.X. Hu, H. Gong, K.Y. Zang, H.F. Chua, J. Vac. Sci. Technol. A 26, 1462 (2008)
S.-K. Hong, T. Hanada, H. Makino, H.-J. Ko, Y. Chen, T. Yao, J. Vac. Sci. Technol. B 19, 1429 (2001)
A.G. Milnes, D.L. Feucht, Heterojunctions and Metal-Semiconductor Junctions (Academic Press, New York, 1972)
P.L. Chen, X.Y. Ma, D.R. Yang, J. Appl. Phys. 101, 053103 (2007)
J.L. Zhao, S.T. Tan, S. Iwan, X.W. Sun, W. Liu, S.J. Chua, Appl. Phys. Lett. 94, 093506 (2009)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
Open Access This is an open access article distributed under the terms of the Creative Commons Attribution Noncommercial License (https://creativecommons.org/licenses/by-nc/2.0), which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
About this article
Cite this article
Ng, A.M.C., Chen, X.Y., Fang, F. et al. Solution-based growth of ZnO nanorods for light-emitting devices: hydrothermal vs. electrodeposition. Appl. Phys. B 100, 851–858 (2010). https://doi.org/10.1007/s00340-010-4173-9
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00340-010-4173-9